Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 148/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Nexperia |
MOSFET N-CH 30V 75A LFPAK |
17.652 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 5V, 10V | 6mOhm @ 25A, 10V | 2V @ 1mA | 28.1nC @ 5V | ±15V | 2500pF @ 25V | - | 105W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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STMicroelectronics |
MOSFET N-CH 525V 4.4A DPAK |
25.974 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 525V | 4.4A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4.5V @ 50µA | 17nC @ 10V | ±30V | 545pF @ 100V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 30A 1212-8 |
27.594 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 3.7mOhm @ 10A, 10V | 2.2V @ 250µA | 51nC @ 10V | +20V, -16V | 2425pF @ 15V | - | 3.6W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Nexperia |
MOSFET N-CH 75V 35.5A LFPAK |
12.390 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 35.5A (Tc) | 10V | 28mOhm @ 15A, 10V | 4V @ 1mA | 21.2nC @ 10V | ±20V | 1417pF @ 25V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 40V 90A DPAK |
45.090 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 6.2mOhm @ 15A, 10V | 2.8V @ 1mA | 67nC @ 10V | ±16V | 3720pF @ 25V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Panasonic Electronic Components |
MOSFET N-CH 30V 20A 8HSO |
29.988 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 59A (Tc) | 4.5V, 10V | 4.1mOhm @ 14A, 10V | 3V @ 2.56mA | 17nC @ 4.5V | ±20V | 2940pF @ 10V | - | 2.8W (Ta), 24W (Tc) | 150°C (TJ) | Surface Mount | HSO8-F4-B | 8-PowerSMD, Flat Leads |
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STMicroelectronics |
MOSFET N-CH 30V 21A POWERFLAT56 |
23.232 |
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Automotive, AEC-Q101, STripFET™ V | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 5.8mOhm @ 10.5A, 10V | 3V @ 250µA | 12nC @ 4.5V | ±22V | 1500pF @ 25V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 60V 11A POWERFLAT |
23.286 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta) | 10V | 12mOhm @ 5.5A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 1035pF @ 30V | - | 2.9W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (3.3x3.3) | 8-PowerVDFN |
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Nexperia |
PSMN1R7-25YLD/LFPAK/REEL 7 Q1 |
15.936 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 1.7mOhm @ 25A, 10V | 2.2V @ 1mA | 46.7nC @ 10V | ±20V | 3415pF @ 12V | Schottky Diode (Body) | 135W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 30V 24A PQFN56 |
90.822 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 104A (Tc) | 4.5V, 10V | 3.3mOhm @ 25A, 10V | 2.35V @ 100µA | 51nC @ 4.5V | ±20V | 4270pF @ 15V | - | 3.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Nexperia |
MOSFET N-CH 55V 75A DPAK |
19.872 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 12mOhm @ 25A, 10V | 4V @ 1mA | 35nC @ 10V | ±20V | 2453pF @ 25V | - | 167W (Tc) | -55°C ~ 185°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 4A TO252 |
122.808 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 900mOhm @ 1.2A, 10V | 4V @ 250µA | 9.6nC @ 10V | ±30V | 315pF @ 100V | - | 36.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 55V 20A D2PAK |
52.758 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 20A (Tc) | 4.5V, 10V | 68mOhm @ 10A, 10V | 2V @ 1mA | - | ±10V | 643pF @ 25V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
22.296 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 30V | 88A (Tc) | 4.5V, 10V | 4.2mOhm @ 44A, 4.5V | 2.1V @ 300µA | 50nC @ 10V | ±20V | 3825pF @ 15V | - | 90W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 168A 8PDFN |
26.862 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 168A (Tc) | 4.5V, 10V | 2.6mOhm @ 24A, 10V | 2.5V @ 250µA | 41nC @ 10V | ±20V | 2540pF @ 15V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 150V 9A 8SOP |
46.392 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 9A (Tc) | 6V, 10V | 65mOhm @ 4A, 10V | 4V @ 250µA | 37nC @ 10V | ±20V | 1783pF @ 75V | - | 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CHANNEL 800V 6A SOT223 |
48.516 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 900mOhm @ 2.2A, 10V | 3.5V @ 110µA | 15nC @ 10V | ±20V | 350pF @ 500V | - | 7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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ON Semiconductor |
MOSFET N-CH 30V 9.1A 8-SOIC |
26.850 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9.1A (Ta) | 4.5V, 10V | 6.1mOhm @ 14.8A, 10V | 3V @ 250µA | 24nC @ 4.5V | ±20V | 2900pF @ 24V | - | 860mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
27.576 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.65mOhm @ 15A, 10V | 2.4V @ 250µA | 75nC @ 10V | +20V, -16V | 3750pF @ 20V | - | 27.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Diodes Incorporated |
MOSFET NCH 60V 80A TO252 |
24.462 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 12mOhm @ 25A, 10V | 3V @ 250µA | 35.2nC @ 10V | ±20V | 1926pF @ 30V | - | 2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
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Alpha & Omega Semiconductor |
MOSFET N-CH 800V 2.8A TO252 |
21.306 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 2.8A (Tc) | 10V | 4.8Ohm @ 1.5A, 10V | 4.5V @ 250µA | 10nC @ 10V | ±30V | 510pF @ 25V | - | 83W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 80V 89A LFPAK |
27.912 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 89A (Tc) | 10V | 98mOhm @ 5A, 10V | 4V @ 1mA | 51.6nC @ 10V | ±20V | 498pF @ 25V | - | 195W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Diodes Incorporated |
MOSFET NCH 60V 90A TO252 |
25.710 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 5.6mOhm @ 50A, 10V | 3V @ 250µA | 47.1nC @ 10V | ±20V | 2962pF @ 30V | - | 2.1W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
26.838 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 40V 75A D2PAK |
26.190 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 7.2mOhm @ 20A, 10V | 4V @ 1mA | 24nC @ 10V | ±20V | 1730pF @ 25V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 20V 7.4A 8SOIC |
20.610 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 7.4A (Ta) | 2.7V, 4.5V | 22mOhm @ 7.4A, 4.5V | 1.5V @ 250µA | 18nC @ 4.5V | ±8V | 1098pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 100V 5.6A DPAK |
22.338 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 100V 26A D2PAK |
19.440 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 26A (Tc) | 10V | 60mOhm @ 15A, 10V | 4V @ 1mA | - | ±20V | 1377pF @ 25V | - | 106W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 80V 6.3A 8-SOIC |
88.716 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 6.3A (Ta) | 10V | 29mOhm @ 3.8A, 10V | 4V @ 250µA | 57nC @ 10V | ±20V | 1680pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 200V 7A DPAK |
159.180 |
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MESH OVERLAY™ | N-Channel | MOSFET (Metal Oxide) | 200V | 7A (Tc) | 10V | 400mOhm @ 3.5A, 10V | 4V @ 250µA | 45nC @ 10V | ±20V | 540pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |