PMIC - Gate-Treiber
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KategorieHalbleiter / Energieverwaltungs-ICs / PMIC - Gate-Treiber
Datensätze 5.436
Seite 99/182
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Angetriebene Konfiguration | Kanaltyp | Anzahl der Treiber | Gate-Typ | Spannung - Versorgung | Logikspannung - VIL, VIH | Strom - Spitzenleistung (Quelle, Senke) | Eingabetyp | High Side Voltage - Max (Bootstrap) | Anstiegs- / Abfallzeit (Typ) | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
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Microchip Technology |
IC MOSFET DVR 3A DUAL HS 16-SOIC |
3.600 |
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- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 3A, 3A | Inverting, Non-Inverting | - | 23ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Renesas Electronics America Inc. |
IC DRIVER FET H-BRDG 80V 16SOIC |
8.388 |
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- | Half-Bridge | Independent | 4 | N-Channel MOSFET | 8.5V ~ 15V | 1V, 2.5V | 1.4A, 1.3A | Non-Inverting | 95V | 9ns, 9ns | -55°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SO |
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Texas Instruments |
IC DVR HALF-BRIDGE HV 10WSON |
8.640 |
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- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9V ~ 14V | 2.3V, - | 3A, 3A | Non-Inverting | 118V | 430ns, 260ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-WSON (4x4) |
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Renesas Electronics America Inc. |
IC MSFT DVR HALF-BRG 100V 8-SOIC |
5.526 |
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- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 3A, 4A | Non-Inverting | 114V | 9ns, 7.5ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America Inc. |
IC MOSFET DRVR SYNC HF 6A 10-DFN |
7.470 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 6.8V ~ 13.2V | - | 2.5A, 4A | Non-Inverting | 36V | 13ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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Renesas Electronics America Inc. |
IC MOSFET DRVR SYNC HF 6A 10-DFN |
5.292 |
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- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 6.8V ~ 13.2V | - | 2.5A, 4A | Non-Inverting | 36V | 13ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL OD 8SOIC |
5.040 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 40ns, 40ns (Max) | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 30V 1.5A 8-SOIC |
6.066 |
|
- | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 25ns, 33ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL OD 8SOIC |
6.948 |
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- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 40ns, 40ns (Max) | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America Inc. |
IC MOSFET DRVR SYNC BUCK 8-SOIC |
4.302 |
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- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 5.5V | 1V, 2V | -, 4A | Non-Inverting | 36V | 8ns, 8ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DVR HI/LO SIDE 14-DIP |
2.538 |
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- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
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Microchip Technology |
IC MOSFET DRIVER 30V 1.5A 8SOIC |
6.984 |
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- | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 25ns, 33ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America Inc. |
IC MOSFET DRVR SYNC BUCK 10-DFN |
8.532 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 5.5V | - | -, 4A | Non-Inverting | 36V | 8ns, 8ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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Renesas Electronics America Inc. |
IC MSFT DVR HALF-BRG 100V 12-DFN |
2.466 |
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- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 3A, 4A | Non-Inverting | 114V | 9ns, 7.5ns | -40°C ~ 125°C (TJ) | Surface Mount | 12-VFDFN Exposed Pad | 12-DFN (4x4) |
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Renesas Electronics America Inc. |
IC MSFT DVR HALF-BRG 100V 8DFN |
8.334 |
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- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 3A, 4A | Non-Inverting | 114V | 9ns, 7.5ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN (4x4) |
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Renesas Electronics America Inc. |
IC MSFT DVR HALF-BRG 100V 8-SOIC |
8.604 |
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- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 3.7V, 7.4V | 3A, 4A | Non-Inverting | 114V | 9ns, 7.5ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DVR HALF-BRIDGE HV 10WSON |
2.268 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9V ~ 14V | 2.3V, - | 3A, 3A | Non-Inverting | 118V | 430ns, 260ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-WSON (4x4) |
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Renesas Electronics America Inc. |
IC MOSFET DRVR SYNC HF 6A 8-SOIC |
3.330 |
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- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 6.8V ~ 13.2V | - | 2.5A, 4A | Non-Inverting | 36V | 13ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Linear Technology/Analog Devices |
IC MOSFET DRIVER N-CH 8-MSOP |
5.868 |
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- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 7.2V ~ 13.5V | 1.85V, 3.25V | 2.5A, 3A | Non-Inverting | 114V | 8ns, 5ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP |
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Maxim Integrated |
IC MOSFET DRVR SGL 6A HS 8-SOIC |
9.501 |
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- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 30V 1.5A 8-DIP |
3.924 |
|
- | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 25ns, 33ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC MOSFET DVR 1.5A DUAL OD 8-DIP |
6.750 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 40ns, 40ns (Max) | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC MOSFET DVR 3A DUAL HS 8DIP |
8.694 |
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- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 3A, 3A | Non-Inverting | - | 23ns, 25ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC MOSFET DVR 3A DUAL HS 8DIP |
7.074 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 3A, 3A | Inverting, Non-Inverting | - | 23ns, 25ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC MOSFET DVR 3A DUAL HS 16SOIC |
3.618 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 3A, 3A | Inverting | - | 23ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Microchip Technology |
IC MOSFET DVR 3A DUAL HS 16SOIC |
6.462 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 3A, 3A | Inverting, Non-Inverting | - | 23ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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|
Microchip Technology |
IC MOSFET DVR 3A DUAL HS 16SOIC |
4.896 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 3A, 3A | Non-Inverting | - | 23ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 3A DUAL HS 16SOIC |
4.734 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 4.5A, 4.5A | Non-Inverting | - | 12ns, 12ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Microchip Technology |
IC MOSFET DVR 3A DUAL HS 16SOIC |
6.264 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 3A, 3A | Inverting | - | 23ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 3A DUAL HS 16SOIC |
7.092 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 3A, 3A | Non-Inverting | - | 23ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |