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Gleichrichter - Single

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 774/1165
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Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Diodentyp
Spannung - DC-Rückwärtsgang (Vr) (max.)
Current - Average Rectified (Io)
Spannung - Vorwärts (Vf) (Max) @ If
Geschwindigkeit
Reverse Recovery Time (trr)
Strom - Umkehrleckage @ Vr
Kapazität @ Vr, F.
Montagetyp
Paket / Fall
Lieferantengerätepaket
Betriebstemperatur - Verbindungsstelle
BY359-1500,127
NXP
DIODE GEN PURP 1.5KV 10A TO220AC
7.596
-
Standard
1500V
10A (DC)
1.8V @ 20A
Standard Recovery >500ns, > 200mA (Io)
600ns
100µA @ 1300V
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
BY329-1500S,127
NXP
DIODE GEN PURP 1.5KV 6A TO220AC
5.616
-
Standard
1500V
6A (DC)
1.6V @ 6.5A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
250µA @ 1300V
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
1PS193,115
NXP
DIODE GEN PURP 80V 215MA SMT3
3.330
-
Standard
80V
215mA (DC)
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
500nA @ 80V
1.5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
150°C (Max)
1PS193,135
NXP
DIODE GEN PURP 80V 215MA SMT3
8.010
-
Standard
80V
215mA (DC)
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
500nA @ 80V
1.5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
150°C (Max)
SBM340-13-F
Diodes Incorporated
DIODE SCHOTTKY 40V 3A POWERMITE3
7.488
-
Schottky
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
180pF @ 4V, 1MHz
Surface Mount
Powermite®3
Powermite 3
-55°C ~ 125°C
MBRM3100-13-F
Diodes Incorporated
DIODE SCHOTTKY 100V 3A
5.364
-
Schottky
100V
3A
760mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
100pF @ 4V, 1MHz
Surface Mount
Powermite®3
Powermite 3
-55°C ~ 125°C
FR303-T
Diodes Incorporated
DIODE GEN PURP 200V 3A DO201AD
3.366
-
Standard
200V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 200V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
1N5400-T
Diodes Incorporated
DIODE GEN PURP 50V 3A DO201AD
4.428
-
Standard
50V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
FR802
Diodes Incorporated
DIODE GEN PURP 100V 8A TO220A
3.490
-
Standard
100V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 100V
-
Through Hole
TO-220-2
TO-220a
-65°C ~ 175°C
SF11-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
4.806
-
Standard
50V
1A
975mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 175°C
RS1BB-13
Diodes Incorporated
DIODE GEN PURP 100V 1A SMB
6.354
-
Standard
100V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
15pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 150°C
SK12-13
Diodes Incorporated
DIODE SCHOTTKY 20V 1A SMB
7.956
-
Schottky
20V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
110pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 125°C
MBRM560-13
Diodes Incorporated
DIODE SCHOTTKY 60V 5A POWERMITE3
4.104
-
Schottky
60V
5A
690mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 60V
-
Surface Mount
Powermite®3
Powermite 3
-55°C ~ 125°C
HER303-T
Diodes Incorporated
DIODE GEN PURP 200V 3A DO201AD
6.300
-
Standard
200V
3A
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
BYR29-800,127
WeEn Semiconductors
DIODE GEN PURP 800V 8A TO220AC
7.704
-
Standard
800V
8A
1.5V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 800V
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
BY329X-1200,127
NXP
DIODE GEN PURP 1.2KV 8A TO220F
5.400
-
Standard
1200V
8A
1.85V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
145ns
1mA @ 1000V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
1PS59SB20,115
NXP
DIODE SCHOTTKY 40V 500MA SMT3
6.786
-
Schottky
40V
500mA (DC)
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 35V
90pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
125°C (Max)
1N4148,143
NXP
DIODE GEN PURP 100V 200MA ALF2
8.838
-
Standard
100V
200mA (DC)
1V @ 10mA
Small Signal =< 200mA (Io), Any Speed
4ns
25nA @ 20V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
ALF2
200°C (Max)
1N4148,133
NXP
DIODE GEN PURP 100V 200MA ALF2
8.280
-
Standard
100V
200mA (DC)
1V @ 10mA
Small Signal =< 200mA (Io), Any Speed
4ns
25nA @ 20V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
ALF2
-
1N4148,113
NXP
DIODE GEN PURP 100V 200MA ALF2
8.136
-
Standard
100V
200mA (DC)
1V @ 10mA
Small Signal =< 200mA (Io), Any Speed
4ns
25nA @ 20V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
ALF2
200°C (Max)
PMEG6010AED,115
Nexperia
DIODE SCHOTTKY 60V 1A 6TSOP
3.078
-
Schottky
60V
1A (DC)
650mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
350µA @ 60V
60pF @ 4V, 1MHz
Surface Mount
SC-74, SOT-457
6-TSOP
150°C (Max)
1N4005/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 1A DO204AL
2.106
-
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-50°C ~ 150°C
1N4007/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
3.708
-
Standard
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
FR304-T
Diodes Incorporated
DIODE GEN PURP 400V 3A DO201AD
5.184
-
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 400V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
HER105-T
Diodes Incorporated
DIODE GEN PURP 400V 1A DO41
3.456
-
Standard
400V
1A
1.1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
FR801
Diodes Incorporated
DIODE GEN PURP 50V 8A TO220A
249
-
Standard
50V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 50V
-
Through Hole
TO-220-2
TO-220a
-65°C ~ 175°C
FR803
Diodes Incorporated
DIODE GEN PURP 200V 8A TO220A
385
-
Standard
200V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 200V
-
Through Hole
TO-220-2
TO-220a
-65°C ~ 175°C
FR804
Diodes Incorporated
DIODE GEN PURP 400V 8A TO220A
6.444
-
Standard
400V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 400V
-
Through Hole
TO-220-2
TO-220a
-65°C ~ 175°C
FR805
Diodes Incorporated
DIODE GEN PURP 600V 8A TO220A
2.988
-
Standard
600V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
10µA @ 600V
-
Through Hole
TO-220-2
TO-220a
-65°C ~ 175°C
S1BB-13
Diodes Incorporated
DIODE GEN PURP 100V 1A SMB
3.526
-
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 150°C