Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 682/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 85A DO203AB |
6.426 |
|
- | Standard, Reverse Polarity | 1400V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 85A DO203AB |
3.510 |
|
- | Standard, Reverse Polarity | 1600V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 180°C |
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|
IXYS |
DIODE GEN PURP 200V 120A SOT227B |
3.528 |
|
- | Standard | 200V | 120A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | - |
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|
IXYS |
DIODE GEN PURP 400V 120A SOT227B |
3.582 |
|
- | Standard | 400V | 120A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | - |
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GeneSiC Semiconductor |
DIODE SCHOTTKY REV 20V DO5 |
3.888 |
|
- | Schottky, Reverse Polarity | 20V | 40A | 520mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20mA @ 10V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
|
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|
GeneSiC Semiconductor |
DIODE SCHOTTKY REV 30V DO5 |
5.832 |
|
- | Schottky, Reverse Polarity | 30V | 40A | 550mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20mA @ 10V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
|
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GeneSiC Semiconductor |
DIODE SCHOTTKY REV 40V DO5 |
4.446 |
|
- | Schottky, Reverse Polarity | 40V | 40A | 590mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20mA @ 10V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 70A DO203AB |
2.574 |
|
- | Standard | 1000V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 180°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 70A DO203AB |
6.210 |
|
- | Standard | 1200V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 180°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 1.2KV 10A TO220AC |
2.502 |
|
- | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 650pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Microsemi |
DIODE GP 1.75KV 250MA AXIAL |
3.114 |
|
Military, MIL-PRF-19500/279 | Standard | 1750V | 250mA | 5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1750V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 220V 1.2A D5A |
5.634 |
|
Military, MIL-PRF-19500/585 | Standard | 220V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 220V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 50V 1.3A AXIAL |
4.392 |
|
Military, MIL-PRF-19500/503 | Standard | 50V | 1.3A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | - | Through Hole | E, Axial | E-PAK | -65°C ~ 155°C |
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Microsemi |
DIODE GEN PURP 100V 1.3A AXIAL |
6.966 |
|
Military, MIL-PRF-19500/503 | Standard | 100V | 1.3A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | - | Through Hole | E, Axial | E-PAK | -65°C ~ 155°C |
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Microsemi |
DIODE GEN PURP 600V 3A B-MELF |
5.904 |
|
Military, MIL-PRF-19500/420 | Standard | 600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY REV 45V DO5 |
4.950 |
|
- | Schottky, Reverse Polarity | 45V | 60A | 660mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 45V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 660V 1.75A D5B |
2.100 |
|
Military, MIL-PRF-19500/590 | Standard | 660V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 660V | 40pF @ 10V, 1MHz | Surface Mount | E-MELF | D-5B | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 880V 1.4A D5B |
6.156 |
|
Military, MIL-PRF-19500/590 | Standard | 880V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 880V | 40pF @ 10V, 1MHz | Surface Mount | E-MELF | D-5B | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 900V 1.4A E-MELF |
2.016 |
|
Military, MIL-PRF-19500/590 | Standard | 900V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 900V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 1.1KV 1.4A D5B |
6.588 |
|
Military, MIL-PRF-19500/590 | Standard | 1100V | 1.4A | 1.6V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 4µA @ 1100V | 40pF @ 10V, 1MHz | Surface Mount | E-MELF | D-5B | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 1.1KV 1.4A D5B |
8.478 |
|
Military, MIL-PRF-19500/590 | Standard | 1100V | 1.4A | 1.6V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 4µA @ 1100V | 40pF @ 10V, 1MHz | Surface Mount | E-MELF | D-5B | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 100V 60A DO5 |
7.902 |
|
- | Schottky | 100V | 60A | 840mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 20V 60A DO5 |
6.714 |
|
- | Schottky | 20V | 60A | 650mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 30V 60A DO5 |
3.924 |
|
- | Schottky | 30V | 60A | 650mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 35V 60A DO5 |
2.196 |
|
- | Schottky | 35V | 60A | 650mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 40V 60A DO5 |
2.574 |
|
- | Schottky | 40V | 60A | 650mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 60A DO5 |
4.500 |
|
- | Schottky | 45V | 60A | 650mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 60V 60A DO5 |
8.982 |
|
- | Schottky | 60V | 60A | 750mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 80V 60A DO5 |
2.304 |
|
- | Schottky | 80V | 60A | 840mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 70A DO203AB |
3.438 |
|
- | Standard | 1200V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 180°C |