Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 678/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
RECTIFIER |
3.510 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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|
|
Microsemi |
RECTIFIER |
4.014 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
RECTIFIER |
7.740 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
RECTIFIER |
7.182 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
RECTIFIER |
3.654 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
RECTIFIER |
8.316 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 40A DO203AB |
6.444 |
|
- | Standard, Reverse Polarity | 800V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 190°C |
|
|
|
Microsemi |
DIODE GEN PURP 1.1KV 1.4A A-MELF |
5.580 |
|
- | Standard | 1100V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 4µA @ 1100V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURPOSE |
2.052 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 40A DO203AB |
3.564 |
|
- | Standard, Reverse Polarity | 1600V | 40A | 1.5V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 160°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 850MA AXIAL |
2.502 |
|
Military, MIL-PRF-19500/503 | Standard | 100V | 850mA | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 100V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C |
|
|
|
Microsemi |
DIODE GEN PURP 440V 1.75A AXIAL |
148 |
|
Military, MIL-PRF-19500/590 | Standard | 440V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 440V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 5A AXIAL |
4.320 |
|
Military, MIL-PRF-19500/420 | Standard | 600V | 5A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 990V 1A AXIAL |
6.858 |
|
Military, MIL-PRF-19500/585 | Standard | 990V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 990V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE RECT ULT FAST REC A-PKG |
5.778 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 50V 1A D5A |
6.786 |
|
Military, MIL-PRF-19500/477 | Standard | 50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 660V 1.75A AXIAL |
3.924 |
|
Military, MIL-PRF-19500/590 | Standard | 660V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 660V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
|
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Microsemi |
DIODE GEN PURP 50V 3A BPKG |
2.394 |
|
Military, MIL-PRF-19500/477 | Standard | 50V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 3A BPKG |
8.370 |
|
Military, MIL-PRF-19500/477 | Standard | 100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 3A BPKG |
6.696 |
|
Military, MIL-PRF-19500/477 | Standard | 150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
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|
IXYS |
DIODE AVALANCHE 1.2KV 49A DO203 |
3.942 |
|
- | Avalanche | 1200V | 49A | 1.55V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 4mA @ 1200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 180°C |
|
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|
Microsemi |
DIODE GEN PURP 50V 1.3A AXIAL |
5.940 |
|
- | Standard | 50V | 1.3A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | - | Through Hole | A, Axial | - | -65°C ~ 155°C |
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|
|
Microsemi |
DIODE GEN PURP 100V 1.3A AXIAL |
5.184 |
|
- | Standard | 100V | 1.3A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | - | Through Hole | A, Axial | - | -65°C ~ 155°C |
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|
Microsemi |
STANDARD RECTIFIER |
4.572 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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|
Microsemi |
STANDARD RECTIFIER |
3.024 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
STANDARD RECTIFIER |
3.348 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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|
|
Microsemi |
STANDARD RECTIFIER |
5.364 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
Microsemi |
STANDARD RECTIFIER |
3.454 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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|
Microsemi |
STANDARD RECTIFIER |
4.086 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 120A D-67 |
6.408 |
|
- | Schottky | 45V | 120A | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 45V | 5200pF @ 5V, 1MHz | Chassis Mount | D-67 HALF-PAK | D-67 | - |