Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 555/1165
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
6.822 |
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SUPERECTIFIER® | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 4µA @ 400V | 48pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 5A DO201AD |
3.096 |
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SUPERECTIFIER® | Standard | 50V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 5A DO201AD |
2.412 |
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SUPERECTIFIER® | Standard | 50V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 5A DO201AD |
6.264 |
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SUPERECTIFIER® | Standard | 100V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 5A DO201AD |
4.950 |
|
SUPERECTIFIER® | Standard | 100V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 5A DO201AD |
2.448 |
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SUPERECTIFIER® | Standard | 150V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 5A DO201AD |
4.122 |
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SUPERECTIFIER® | Standard | 150V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 5A DO201AD |
6.984 |
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SUPERECTIFIER® | Standard | 200V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 5A DO201AD |
2.880 |
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SUPERECTIFIER® | Standard | 200V | 5A | 960mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 117pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 5A DO201AD |
5.292 |
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SUPERECTIFIER® | Standard | 300V | 5A | 1.25V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 48pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 5A DO201AD |
3.870 |
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SUPERECTIFIER® | Standard | 300V | 5A | 1.25V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 48pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 5A DO201AD |
2.160 |
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SUPERECTIFIER® | Standard | 400V | 5A | 1.25V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 48pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 12A DO201AD |
2.700 |
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- | Schottky | 45V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 45V | - | Through Hole | DO-201AD, Axial | DO-201AD | 200°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 12A DO201AD |
6.120 |
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- | Schottky | 60V | 12A | 700mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | 200°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 8A TO220AC |
6.084 |
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- | Standard | 50V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 50V | 65pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 8A TO220AC |
8.406 |
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- | Standard | 100V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 100V | 65pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 8A TO220AC |
2.016 |
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- | Standard | 200V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | 65pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 8A TO220AC |
6.426 |
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- | Standard | 300V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 65pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 8A TO220AC |
4.788 |
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- | Standard | 400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 65pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A TO220AC |
6.804 |
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- | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 10µA @ 600V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 8A TO220AC |
3.312 |
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- | Standard | 800V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 10µA @ 800V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 35V 16A TO220AC |
3.258 |
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- | Schottky | 35V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 35V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 16A TO220AC |
2.304 |
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- | Schottky | 45V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 16A TO220AC |
4.914 |
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- | Schottky | 50V | 16A | 750mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 16A TO220AC |
6.012 |
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- | Schottky | 60V | 16A | 750mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 16A TO220AC |
3.366 |
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- | Schottky | 90V | 16A | 850mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 90V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 10A TO220AC |
6.534 |
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- | Schottky | 100V | 10A | 850mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 7.5A 60V ITO-220A |
4.068 |
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- | Schottky | 60V | 7.5A | 800mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 60V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 15A SMPC4.0 |
2.178 |
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- | Schottky | 100V | 15A | 700mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 12A DO201AD |
2.268 |
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Automotive, AEC-Q101 | Schottky | 20V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |