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Gleichrichter - Single

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 450/1165
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Diodentyp
Spannung - DC-Rückwärtsgang (Vr) (max.)
Current - Average Rectified (Io)
Spannung - Vorwärts (Vf) (Max) @ If
Geschwindigkeit
Reverse Recovery Time (trr)
Strom - Umkehrleckage @ Vr
Kapazität @ Vr, F.
Montagetyp
Paket / Fall
Lieferantengerätepaket
Betriebstemperatur - Verbindungsstelle
RGL34B-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 500MA DO213
8.802
SUPERECTIFIER®
Standard
100V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
BYS12-90HE3_A/H
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 90V 1.5A DO214AC
2.088
Automotive, AEC-Q100
Schottky
90V
1.5A
750mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS210-M3/5BT
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 1.5A 100V DO214AA
4.248
-
Schottky
100V
1.5A
750mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
30µA @ 100V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SS29-M3/5BT
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 1.5A 90V DO-214AA
2.556
Automotive, AEC-Q101
Schottky
90V
1.5A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
30µA @ 90V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
BYM12-100HE3_A/H
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1A DO213AB
6.300
Automotive, AEC-Q101, Superectifier®
Standard
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
20pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
BYM12-150HE3_A/H
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 1A DO213AB
3.492
Automotive, AEC-Q101, Superectifier®
Standard
150V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 150V
20pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
BYM12-200HE3_A/H
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO213AB
7.326
Automotive, AEC-Q101, Superectifier®
Standard
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
20pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
BYM12-300HE3_A/H
Vishay Semiconductor Diodes Division
DIODE GEN PURP 300V 1A DO213AB
3.096
Automotive, AEC-Q101, Superectifier®
Standard
300V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
14pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
BYM12-400HE3_A/H
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1A DO213AB
4.554
Automotive, AEC-Q101, Superectifier®
Standard
400V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
14pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
BYM12-50HE3_A/H
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 1A DO213AB
6.300
Automotive, AEC-Q101, Superectifier®
Standard
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
20pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
CRS05(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1A SFLAT
3.598
-
Schottky
30V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
SBRT3U40P1Q-7
Diodes Incorporated
DIODE SBR 40V 3A POWERDI123
5.454
Automotive, AEC-Q101
Super Barrier
40V
3A
490mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
180µA @ 40V
-
Surface Mount
POWERDI®123
PowerDI™ 123
-65°C ~ 150°C
CRS10I40A(TE85L,QM
Toshiba Semiconductor and Storage
DIODE GEN PURP 40V 1A S-FLAT
2.340
-
Standard
40V
1A
490mV @ 700mA
Standard Recovery >500ns, > 200mA (Io)
-
60µA @ 40V
35pF @ 10V, 1MHz
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
150°C (Max)
CRS10I40B(TE85L,QM
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 1A S-FLAT
3.436
-
Schottky
40V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
62pF @ 10V, 1MHz
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
150°C (Max)
BYG20D-M3/TR3
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 200V 1.5A
7.272
Automotive, AEC-Q101
Avalanche
200V
1.5A
1.4V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 200V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BYG20G-M3/TR3
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 400V 1.5A
8.028
Automotive, AEC-Q101
Avalanche
400V
1.5A
1.4V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 400V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BYG20J-M3/TR3
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 600V 1.5A
5.778
Automotive, AEC-Q101
Avalanche
600V
1.5A
1.4V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 600V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BYG21K-M3/TR3
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 800V 1.5A
8.730
Automotive, AEC-Q101
Avalanche
800V
1.5A
1.6V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
1µA @ 800V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BYG21M-M3/TR3
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 1KV 1.5A
7.506
Automotive, AEC-Q101
Avalanche
1000V
1.5A
1.6V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
1µA @ 1000V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BYG20D-M3/TR
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 200V 1.5A
7.992
Automotive, AEC-Q101
Avalanche
200V
1.5A
1.4V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 200V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BYG20G-M3/TR
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 400V 1.5A
7.416
Automotive, AEC-Q101
Avalanche
400V
1.5A
1.4V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 400V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BYG20J-M3/TR
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 600V 1.5A
8.748
Automotive, AEC-Q101
Avalanche
600V
1.5A
1.4V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 600V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BYG21K-M3/TR
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 800V 1.5A
8.802
Automotive, AEC-Q101
Avalanche
800V
1.5A
1.6V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
1µA @ 800V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BYG21M-M3/TR
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 1KV 1.5A
3.168
Automotive, AEC-Q101
Avalanche
1000V
1.5A
1.6V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
1µA @ 1000V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS25-M3/5BT
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 2A 50V DO-214AA
8.388
-
Schottky
50V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 50V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 150°C
SS26-M3/5BT
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 2A 60V DO-214AA
4.770
-
Schottky
60V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 60V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 150°C
1N5820HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 3A DO201AD
6.030
Automotive, AEC-Q101
Schottky
20V
3A
475mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
200pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
1N5821HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
6.012
Automotive, AEC-Q101
Schottky
30V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
200pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
1N5822HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 3A DO201AD
3.636
-
Schottky
40V
3A
525mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
200pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
ESH2BA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO214AC
4.086
-
Standard
100V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C