Gleichrichter - Single

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Diodentyp

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Spannung - DC-Rückwärtsgang (Vr) (max.)

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Current - Average Rectified (Io)

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Spannung - Vorwärts (Vf) (Max) @ If

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Geschwindigkeit

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Reverse Recovery Time (trr)

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Strom - Umkehrleckage @ Vr

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Kapazität @ Vr, F.

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Montagetyp

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single

Datensätze 34.936

Seite 357/1165

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Diodentyp	Spannung - DC-Rückwärtsgang (Vr) (max.)	Current - Average Rectified (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Recovery Time (trr)	Strom - Umkehrleckage @ Vr	Kapazität @ Vr, F.	Montagetyp	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Verbindungsstelle
S1J-M3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO214AC	6.678	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
CDBF00340-HF	Comchip Technology	DIODE SCHOTTKY 40V 30MA 1005	3.186	-	Schottky	40V	30mA	370mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 40V	1.5pF @ 1V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
CD1408-R1800	Bourns	DIODE GEN PURP 800V 1A 1408	3.276	-	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	1µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	Chip, Concave Terminals	1408	-65°C ~ 175°C
CD214A-R11000	Bourns	DIODE GEN PURP 1KV 1A DO214AC	8.532	-	Standard	1000V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 175°C
CD214A-R1800	Bourns	DIODE GEN PURP 800V 1A SMAJ	2.100	-	Standard	800V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMAJ (DO-214AC)	-55°C ~ 175°C
1N4936-E3/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL	7.884	Automotive, AEC-Q101	Standard	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N4937-E3/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL	2.574	Automotive, AEC-Q101	Standard	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 600V	12pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BA158-E3/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL	8.784	Automotive, AEC-Q101	Standard	600V	1A	1.3V @ 1A	Standard Recovery >500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
CBS10S30,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 1A CST2B	5.580	-	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	135pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	CST2B	125°C (Max)
CBS10S40,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A CST2B	4.806	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 40V	120pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	CST2B	125°C (Max)
SS24SHE3_B/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 2A 40V DO-214AC	2.880	Automotive, AEC-Q101	Schottky	40V	2A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	130pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SB250S-E3/54	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 2A DO204AL	4.950	-	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
GPP20B-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 2A DO204AC	2.466	-	Standard	100V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	12pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
HS1BL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	8.586	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HT12G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	5.670	-	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT11G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	3.078	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT12G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	8.118	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT13G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A TS-1	5.346	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT14G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	6.228	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HT12G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	6.516	-	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HT13G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	3.978	-	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT12G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	7.074	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT13G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A TS-1	6.048	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT14G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	8.082	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SURS8120T3G-IR01	ON Semiconductor	DIODE GP ULT FAST 200V 1A SMB	7.704	Automotive, AEC-Q101	Standard	200V	2A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 200V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
SURS8260T3G-VF01	ON Semiconductor	DIODE GEN PURP 600V 2A SMB	8.892	Automotive, AEC-Q101	Standard	600V	2A	1.45V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
XBS023P11R-G	Torex Semiconductor Ltd	SCHOTTKY BARRIER DIODE	6.606	*	-	-	-	-	-	-	-	-	-	-	-	-
XBS053P11R-G	Torex Semiconductor Ltd	SCHOTTKY BARRIER DIODE	7.920	*	-	-	-	-	-	-	-	-	-	-	-	-
RS1A-M3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO214AC	4.608	-	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1B-M3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO214AC	3.508	-	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C

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