Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 119/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
6.312 |
|
- | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 600V 10A TO220AC |
12.420 |
|
- | Silicon Carbide Schottky | 600V | 10A | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 430pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 12A DO203AA |
16.512 |
|
- | Standard, Reverse Polarity | 1200V | 12A | 1.26V @ 38A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 1200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A TO247AC |
17.148 |
|
HEXFRED® | Standard | 1200V | 8A | 3.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 10µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 40A TO247AC |
18.000 |
|
- | Standard | 1200V | 40A | 1.4V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 35A DO203AB |
9.324 |
|
- | Standard | 100V | 35A | 1.7V @ 110A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 60A TO247AC |
10.044 |
|
FRED Pt® | Standard | 200V | 60A | 1.08V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 28ns | 50µA @ 200V | - | Through Hole | TO-247-3 | TO-247AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 12A DO203AA |
8.112 |
|
- | Standard | 1200V | 12A | 1.26V @ 38A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 1200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 25A DO203AA |
8.808 |
|
- | Standard | 1200V | 25A | 1.3V @ 78A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 1200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 16A TO247-3 |
8.928 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 470pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 40A DO203AB |
202 |
|
- | Standard | 200V | 40A | 1.3V @ 126A | Standard Recovery >500ns, > 200mA (Io) | - | 2.5mA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 200°C |
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Microsemi |
DIODE GEN PURP 200V 1A D5A |
6.444 |
|
- | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 30A TO247 |
10.188 |
|
- | Standard | 1000V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1000V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 40A DO203AB |
194 |
|
- | Standard | 400V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 40A DO203AB |
8.118 |
|
- | Standard | 600V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 100V 60A SPD-2A |
8.844 |
|
- | Schottky | 100V | 60A | 870mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 100V | 1500pF @ 5V, 1MHz | Surface Mount | SPD-2A | SPD-2A | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 60A DO203AB |
8.172 |
|
- | Standard | 50V | 60A | 1.3V @ 188A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 200°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 15A TO-220-2 |
4.212 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 15A (DC) | 1.55V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 600V | 550pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Rohm Semiconductor |
DIODE SILICON 650V 15A TO247 |
10.044 |
|
- | Silicon Carbide Schottky | 650V | 15A | 1.55V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 600V | 550pF @ 1V, 1MHz | Through Hole | TO-247-3 | TO-247 | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 40A DO203AB |
126 |
|
- | Standard | 50V | 40A | 1.3V @ 126A | Standard Recovery >500ns, > 200mA (Io) | - | 2.5mA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 40A DO203AB |
8.478 |
|
- | Standard | 100V | 40A | 1.3V @ 126A | Standard Recovery >500ns, > 200mA (Io) | - | 2.5mA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 200°C |
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Microsemi |
DIODE GEN PURP 400V 1A D5A |
7.284 |
|
- | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 16A DO203AA |
8.370 |
|
- | Standard | 1000V | 16A | 1.4V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 50µA @ 1000V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 40A TO247AC |
8.472 |
|
- | Standard | 1600V | 40A | 1.14V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
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Microsemi |
DIODE SCHOTTKY 70V 33MA DO35 |
84 |
|
- | Schottky | 70V | 33mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 50V 1A AXIAL |
7.932 |
|
- | Standard | 50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 16A TO220-2 |
8.868 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 16A (DC) | 1.95V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 730pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 20A TO247-3 |
8.136 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 210µA @ 650V | 590pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -55°C ~ 175°C |
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Rohm Semiconductor |
DIODE SILICON 650V 20A TO247 |
8.508 |
|
- | Silicon Carbide Schottky | 650V | 20A | 1.55V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 730pF @ 1V, 1MHz | Through Hole | TO-247-3 | TO-247 | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 30A DOP3I |
19.104 |
|
- | Standard | 600V | 30A | 3.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 40µA @ 600V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | 150°C (Max) |