Rohm Semiconductor Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerRohm Semiconductor
Datensätze 814
Seite 1/28
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Rohm Semiconductor |
MOSFET N-CH 20V 0.2A EMT3 |
5.731.692 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.2V, 2.5V | 1.2Ohm @ 100mA, 2.5V | 1V @ 1mA | - | ±8V | 25pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | EMT3F (SOT-416FL) | SC-89, SOT-490 |
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Rohm Semiconductor |
MOSFET N-CH 20V 0.1A VMT3 |
1.557.306 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4.5V | 3.5Ohm @ 100mA, 4.5V | 1V @ 100µA | - | ±8V | 7.1pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VMT3 | SOT-723 |
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Rohm Semiconductor |
MOSFET N-CH 50V 0.2A 3VMT |
204.588 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 1.2V, 4.5V | 2.2Ohm @ 200mA, 4.5V | 1V @ 1mA | - | ±8V | 25pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VMT3 | SOT-723 |
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Rohm Semiconductor |
MOSFET N-CH 30V .1A SOT416 |
1.817.574 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 8Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13pF @ 5V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | EMT3 | SC-75, SOT-416 |
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Rohm Semiconductor |
MOSFET N-CH 30V .1A VMT3 |
767.352 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 8Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13pF @ 5V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VMT3 | SOT-723 |
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Rohm Semiconductor |
MOSFET N-CH 30V 300MA SOT-323 |
385.392 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 300mA (Ta) | 2.5V, 4.5V | 1.1Ohm @ 300mA, 4.5V | 1.5V @ 1mA | - | ±12V | 24pF @ 10V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | UMT3 | SC-70, SOT-323 |
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Rohm Semiconductor |
MOSFET P-CH 20V 0.2A EMT3 |
524.022 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.2V, 4.5V | 1.2Ohm @ 200mA, 4.5V | 1V @ 100µA | 1.4nC @ 4.5V | ±10V | 115pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | EMT3 | SC-75, SOT-416 |
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Rohm Semiconductor |
MOSFET N-CH 30V 4A TSMT3 |
811.500 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 2.5V, 4.5V | 48mOhm @ 4A, 4.5V | 1.5V @ 1mA | 8.3nC @ 4.5V | ±12V | 475pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 60V 3A TSMT3 |
1.238.568 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 3A (Ta) | 4V, 10V | 85mOhm @ 3A, 10V | 2.5V @ 1mA | - | ±20V | 380pF @ 10V | - | 540mW (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 45V 3A TSMT3 |
748.014 |
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- | N-Channel | MOSFET (Metal Oxide) | 45V | 3A (Ta) | 2.5V, 4.5V | 67mOhm @ 3A, 4.5V | 1.5V @ 1mA | 6.2nC @ 4.5V | ±12V | 510pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET P-CH 30V 12A HSMT8 |
59.790 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 8mOhm @ 12A, 10V | 2.5V @ 1mA | 62nC @ 10V | ±20V | 3200pF @ 15V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CH 250V 0.5A SC-96-3 |
110.322 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 500mA (Ta) | 4V, 10V | 8.8Ohm @ 250mA, 10V | 3V @ 1mA | 3.5nC @ 10V | ±20V | 70pF @ 25V | - | 540mW (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET P-CH 100V 1.5A TSMT |
213.462 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 1.5A (Ta) | 4V, 10V | 470mOhm @ 1.5A, 10V | 2.5V @ 1mA | 322nC @ 10V | ±20V | 950pF @ 25V | - | 600mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 1700V 3.7A |
13.728 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1700V | 3.7A (Tc) | 18V | 1.5Ohm @ 1.1A, 18V | 4V @ 900µA | 14nC @ 18V | +22V, -6V | 184pF @ 800V | - | 35W (Tc) | 175°C (TJ) | Through Hole | TO-3PFM | TO-3PFM, SC-93-3 |
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Rohm Semiconductor |
MOSFET NCH 650V 21A TO247N |
45.870 |
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- | N-Channel | SiCFET (Silicon Carbide) | 650V | 21A (Tc) | 18V | 156mOhm @ 6.7A, 18V | 5.6V @ 3.33mA | 38nC @ 18V | +22V, -4V | 460pF @ 500V | - | 103W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
MOSFET NCH 1.2KV 17A TO247N |
20.436 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 17A (Tc) | 18V | 208mOhm @ 5A, 18V | 5.6V @ 2.5mA | 42nC @ 18V | +22V, -4V | 398pF @ 800V | - | 103W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
MOSFET NCH 650V 39A TO247N |
12.216 |
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- | N-Channel | SiCFET (Silicon Carbide) | 650V | 39A (Tc) | 18V | 78mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58nC @ 18V | +22V, -4V | 852pF @ 500V | - | 165W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 1200V 22A TO-247 |
40.590 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 22A (Tc) | 18V | 208mOhm @ 7A, 18V | 4V @ 2.5mA | 62nC @ 18V | +22V, -6V | 1200pF @ 800V | - | 165W (Tc) | 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET NCH 1.2KV 31A TO247N |
21.300 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 31A (Tc) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 60nC @ 18V | +22V, -4V | 785pF @ 800V | - | 165W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 1200V 40A TO-247 |
32.502 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 40A (Tc) | 18V | 117mOhm @ 10A, 18V | 4V @ 4.4mA | 106nC @ 18V | +22V, -6V | 2080pF @ 800V | - | 262W (Tc) | 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET NCH 650V 70A TO247N |
20.568 |
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- | N-Channel | SiCFET (Silicon Carbide) | 650V | 70A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104nC @ 18V | +22V, -4V | 1526pF @ 500V | - | 262W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
MOSFET NCH 1.2KV 55A TO247N |
18.210 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 55A (Tc) | 18V | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107nC @ 18V | +22V, -4V | 1337pF @ 800V | - | 262W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 1200V 40A TO-247 |
22.968 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 40A (Tc) | 18V | 117mOhm @ 10A, 18V | 4V @ 4.4mA | 106nC @ 18V | +22V, -6V | 1850pF @ 800V | - | 262W (Tc) | 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET NCH 650V 93A TO247N |
17.904 |
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- | N-Channel | SiCFET (Silicon Carbide) | 650V | 93A (Tc) | 18V | 28.6mOhm @ 36A, 18V | 5.6V @ 18.2mA | 133nC @ 18V | +22V, -4V | 2208pF @ 500V | - | 339W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
MOSFET NCH 1.2KV 72A TO247N |
18.816 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 72A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 131nC @ 18V | +22V, -4V | 2222pF @ 800V | - | 339W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 60V 0.25A SST3 |
313.704 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 2.5V, 10V | 2.4Ohm @ 250mA, 10V | 2.3V @ 1mA | - | ±20V | 15pF @ 25V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | SST3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET P-CH 20V 0.1A VMT3 |
664.344 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4.5V | 3.8Ohm @ 100mA, 4.5V | 1V @ 100µA | - | ±10V | 15pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VMT3 | SOT-723 |
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Rohm Semiconductor |
1.2V DRIVE NCH MOSFET |
29.466 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 1.2V, 4.5V | - | 1V @ 1mA | - | ±8V | 25pF @ 10V | - | 350mW (Ta) | 150°C (TJ) | Surface Mount | SST3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 50V 0.2A UMT3F |
349.686 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 0.9V, 4.5V | 2.2Ohm @ 200mA, 4.5V | 800mV @ 1mA | - | ±8V | 26pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | UMT3F | SC-85 |
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Rohm Semiconductor |
MOSFET P-CH 20V 0.1A EMT3 |
129.414 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4.5V | 3.8Ohm @ 100mA, 4.5V | 1V @ 100µA | - | ±10V | 15pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | EMT3F (SOT-416FL) | SC-89, SOT-490 |