Renesas Electronics America Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerRenesas Electronics America
Datensätze 485
Seite 7/17
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Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Renesas Electronics America |
MOSFET N-CH 100V 25A LFPAK |
7.362 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 25A (Ta) | 4.5V, 10V | 13mOhm @ 12.5A, 10V | - | 43nC @ 4.5V | ±20V | 6160pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 100V 23A LFPAK |
6.264 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Ta) | 10V | 17mOhm @ 11.5A, 10V | - | 35nC @ 10V | ±20V | 2550pF @ 10V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 150V W-PAK |
2.196 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 25A (Ta) | 10V | 48mOhm @ 12.5A, 10V | - | 38nC @ 10V | ±30V | 2400pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 150V W-PAK |
7.992 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 25A (Ta) | 10V | 58mOhm @ 12.5A, 10V | - | 20nC @ 10V | ±30V | 1250pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 200V W-PAK |
8.856 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 20A (Ta) | 10V | 69mOhm @ 10A, 10V | - | 38nC @ 10V | ±30V | 2400pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 600V 0.4A MP3A |
4.158 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 400mA (Ta) | 10V | 42Ohm @ 200mA, 10V | - | 4.3nC @ 10V | ±30V | 37.5pF @ 25V | - | 27.2W (Tc) | 150°C (TJ) | Surface Mount | MP-3A | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 600V 1A MP3A |
5.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1A (Ta) | 10V | 17.5Ohm @ 500mA, 10V | 5V @ 1mA | 5nC @ 10V | ±30V | 37.5pF @ 25V | - | 29.7W (Tc) | 150°C (TJ) | Surface Mount | MP-3A | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 30V 35A 2WPACK |
6.642 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Ta) | 4.5V, 10V | 5.2mOhm @ 17.5A, 10V | 2.5V @ 1mA | 14nC @ 4.5V | ±20V | 2180pF @ 10V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 130A 8HVSON |
8.046 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 130A (Tc) | 4.5V, 10V | 1.82mOhm @ 39A, 4.5V | - | 257nC @ 10V | ±20V | 10850pF @ 10V | - | 1.5W (Ta), 83W (Tc) | 150°C (TJ) | Surface Mount | 8-HVSON (5.4x5.15) | 8-PowerVDFN |
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Renesas Electronics America |
MOSFET N-CH 900V 3A TO-3P |
6.822 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 3A (Ta) | 10V | 7Ohm @ 1.5A, 10V | - | - | ±30V | 425pF @ 10V | - | 80W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET N-CH 900V 5A TO-3P |
2.610 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 5A (Ta) | 10V | 4Ohm @ 3A, 10V | - | - | ±30V | 740pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET N-CH 900V 6A TO-3P |
4.086 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 6A (Ta) | 10V | 3Ohm @ 3A, 10V | - | - | ±30V | 980pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET N-CH 900V 6A TO-3P |
3.546 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 8A (Ta) | 10V | 1.6Ohm @ 4A, 10V | - | - | ±30V | 1730pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET N-CH 900V 8A TO-3P |
2.070 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 8A (Ta) | 10V | 1.6Ohm @ 4A, 10V | - | - | ±30V | 1730pF @ 10V | - | 60W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET N-CH 900V 6A TO-3P |
3.798 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 6A (Ta) | 10V | 3Ohm @ 3A, 10V | - | - | ±30V | 980pF @ 10V | - | 60W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET N-CH 1500V 2A TO-3P |
5.382 |
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- | N-Channel | MOSFET (Metal Oxide) | 1500V | 2A (Ta) | 15V | 12Ohm @ 1A, 15V | - | - | ±20V | 984.7pF @ 30V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-3PFM | TO-3PFM, SC-93-3 |
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Renesas Electronics America |
MOSFET N-CH 250V 1A TO-92 |
8.802 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 1A (Ta) | 2.5V, 4V | 2.6Ohm @ 500mA, 4V | - | 5.5nC @ 4V | ±10V | 140pF @ 25V | - | 900mW (Ta) | 150°C (TJ) | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
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Renesas Electronics America |
MOSFET N-CH 250V 0.4A TO-92 |
3.474 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 400mA (Ta) | 2.5V, 4V | 5.7Ohm @ 200mA, 4V | - | 3.7nC @ 4V | ±10V | 80pF @ 25V | - | 750mW (Ta) | 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Renesas Electronics America |
MOSFET N-CH 150V 1A TO-92 |
4.770 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 1A (Ta) | 2.5V, 4V | 1.95Ohm @ 500mA, 4V | - | 3.5nC @ 4V | ±10V | 98pF @ 10V | - | 750mW (Ta) | 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) |
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Renesas Electronics America |
MOSFET N-CH 250V 20A LDPAK |
2.934 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 20A (Ta) | 10V | 180mOhm @ 10A, 10V | - | 47nC @ 10V | ±30V | 1300pF @ 25V | - | 75W (Tc) | 150°C (TJ) | Surface Mount | 4-LDPAK | SC-83 |
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Renesas Electronics America |
MOSFET N-CH 600V 0.2A TO-92 |
5.580 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 200mA (Ta) | 10V | 16.5Ohm @ 100mA, 10V | - | 4.8nC @ 10V | ±30V | 66pF @ 25V | - | 750mW (Ta) | 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 Short Body |
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Renesas Electronics America |
MOSFET N-CH 40V 100A TO-263 |
3.096 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Ta) | 10V | 3.3mOhm @ 50A, 10V | - | 100nC @ 10V | ±20V | 5550pF @ 25V | - | 1.5W (Ta), 119W (Tc) | 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 60V 100A TO-263 |
8.964 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 10V | 4.2mOhm @ 50A, 10V | - | 133nC @ 10V | ±20V | 7730pF @ 25V | - | 1.5W (Ta), 156W (Tc) | 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 40V 100A TO-263 |
6.876 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2.3mOhm @ 50A, 10V | - | 120nC @ 10V | ±20V | 7050pF @ 25V | - | 1.8W (Ta), 176W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Renesas Electronics America |
MOSFET N-CH 55V 100A TO-263 |
7.578 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 3.25mOhm @ 50A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 7350pF @ 25V | - | 1.8W (Ta), 176W (Tc) | 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 40V 110A TO-263 |
7.128 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | 2.3mOhm @ 55A, 10V | 4V @ 250µA | 270nC @ 10V | ±20V | 15750pF @ 25V | - | 1.8W (Ta), 220W (Tc) | 175°C (TJ) | Surface Mount | TO-263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 40V 110A TO-263 |
4.860 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | 1.75mOhm @ 55A, 10V | 4V @ 250µA | 189nC @ 10V | ±20V | 10800pF @ 25V | - | 1.8W (Ta), 250W (Tc) | 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 55V 110A TO-263 |
7.542 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 2.2mOhm @ 55A, 10V | 4V @ 250µA | 189nC @ 10V | ±20V | 11250pF @ 25V | - | 1.8W (Ta), 250W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 40V 110A TO-263 |
6.714 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | 1.4mOhm @ 55A, 10V | 4V @ 250µA | 297nC @ 10V | ±20V | 15750pF @ 25V | - | 1.8W (Ta), 348W (Tc) | 175°C (TJ) | Surface Mount | TO-263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 55V 110A TO-263 |
2.520 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 2.4mOhm @ 55A, 10V | 4V @ 250µA | 380nC @ 10V | ±20V | 25700pF @ 25V | - | 1.8W (Ta), 288W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |