SIZ988DT-T1-GE3
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Nur als Referenz
Teilenummer | SIZ988DT-T1-GE3 |
PNEDA Teilenummer | SIZ988DT-T1-GE3 |
Beschreibung | MOSFET 2 N-CH 30V 8-POWERPAIR |
Hersteller | Vishay Siliconix |
Stückpreis | Angebot anfordern |
Auf Lager | 21.612 |
Lager | Shipped from Hong Kong SAR |
Voraussichtliche Lieferung | Feb 26 - Mär 3 (Wählen Sie Expressed Shipping) |
Guarantee | Bis zu 1 Jahr [PNEDA-Garantie] * |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SIZ988DT-T1-GE3 Ressourcen
Marke | Vishay Siliconix |
ECAD Module |
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Mfr. Artikelnummer | SIZ988DT-T1-GE3 |
Kategorie | Halbleiter › Transistoren › Transistoren - FETs, MOSFETs - Arrays |
Datenblatt |
SIZ988DT-T1-GE3, SIZ988DT-T1-GE3 Datenblatt
(Total Pages: 14, Größe: 230,46 KB)
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SIZ988DT-T1-GE3 Technische Daten
Hersteller | Vishay Siliconix |
Serie | TrenchFET® |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Standard |
Drain to Source Voltage (Vdss) | 30V |
Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | 40A (Tc), 60A (Tc) |
Rds On (Max) @ Id, Vgs | 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V |
Vgs (th) (Max) @ Id | 2.4V @ 250µA, 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 4.5V, 23.1nC @ 4.5V |
Eingangskapazität (Ciss) (Max) @ Vds | 1000pF @ 15V, 2425pF @ 15V |
Leistung - max | 20.2W, 40W |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Montagetyp | Surface Mount |
Paket / Fall | 8-PowerWDFN |
Lieferantengerätepaket | 8-PowerPair® |
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