NXP Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerNXP USA Inc.
Datensätze 468
Seite 16/16
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NXP |
MOSFET N-CH 100V 169A D2PAK-7 |
6.714 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | - | - | - | - | - | - | - | - | - | - | Surface Mount | D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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NXP |
MOSFET N-CH 100V 147A D2PAK-7 |
4.320 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | - | - | - | - | - | - | - | - | - | - | Surface Mount | D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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NXP |
MOSFET N-CH 60V D2PAK |
3.402 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | - | - | - | - | - | - | - | - | - | - | Surface Mount | D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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NXP |
MOSFET N-CH 80V D2PAK |
8.136 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | - | - | - | - | - | - | - | - | - | - | Surface Mount | D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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NXP |
MOSFET N-CH 100V D2PAK |
3.114 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | - | - | - | - | - | - | - | - | - | - | Surface Mount | D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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NXP |
MOSFET N-CH 100V 1.8A SC-73 |
4.176 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.8A (Ta) | 4.5V, 10V | 235mOhm @ 1.5A, 10V | 2.5V @ 250µA | 10nC @ 10V | ±20V | 475pF @ 80V | - | 800mW (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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NXP |
MOSFET N-CH 100V SC-73 |
2.610 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 900mA (Ta) | 4.5V, 10V | 950mOhm @ 800mA, 10V | 2.5V @ 250µA | 3nC @ 10V | ±20V | 160pF @ 80V | - | 800mW (Ta), 6.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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NXP |
MOSFET N-CH 40V TO-220AB |
5.238 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 40V D2PAK |
2.412 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 190A (Tc) | - | 1.3mOhm @ 90A, 5V | - | - | - | - | - | - | - | Surface Mount | D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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NXP |
MOSFET N-CH 60V 75A TO-220F |
5.634 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 75A (Tc) | 10V | 4mOhm @ 25A, 10V | 4V @ 1mA | 103nC @ 10V | ±20V | 5494pF @ 25V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack, Isolated Tab |
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NXP |
MOSFET N-CH 108V 100A I2PAK |
5.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 108V | 100A (Tj) | 10V | 8.5mOhm @ 25A, 10V | 4V @ 1mA | 111nC @ 10V | ±20V | 5512pF @ 50V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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NXP |
MOSFET N-CH 40V 120A D2PAK |
2.142 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.51mOhm @ 25A, 10V | 4V @ 1mA | 145nC @ 10V | ±20V | 11340pF @ 25V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 60V TO220AB |
2.934 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 51.5A (Tc) | 10V | 7.8mOhm @ 25A, 10V | 4.6V @ 1mA | 38.7nC @ 10V | ±20V | 2651pF @ 30V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack, Isolated Tab |
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NXP |
MOSFET N-CH D2PAK |
2.124 |
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* | - | - | - | - | 10V | - | - | - | ±20V | - | - | - | - | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH LFPAK |
8.856 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NXP |
MOSFET N-CH LFPAK |
2.376 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 39A (Tc) | 10V | 25mOhm @ 10A, 10V | 4V @ 1mA | 25.9nC @ 10V | ±20V | 1800pF @ 25V | - | 95W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH LFPAK |
7.290 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 39A (Tc) | 10V | 25mOhm @ 10A, 10V | 4V @ 1mA | 25.9nC @ 10V | ±20V | 1800pF @ 25V | - | 95W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
CA/JCOP/MF4K/4B-UZ |
7.812 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |