Microsemi Gleichrichter - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Filter anzeigen
Filter zurücksetzen
Filter anwenden
KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerMicrosemi Corporation
Datensätze 2.560
Seite 2/86
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE SCHOTTKY 45V 1A DO213AB |
6.552 |
|
- | Schottky | 45V | 1A | 490mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 45V | 70pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF | DO-213AB | -65°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 3A AXIAL |
176 |
|
- | Standard | 100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 1A D5A |
6.210 |
|
- | Standard | 50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 4A B-MELF |
6.564 |
|
- | Standard | - | 4A (DC) | 1V @ 200mA | Standard Recovery >500ns, > 200mA (Io) | 3µs | 1nA @ 125V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 1.2KV 30A TO247 |
7.644 |
|
- | Silicon Carbide Schottky | 1200V | 30A (DC) | 1.5V @ 30A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-247-2 | TO-247 | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 20V 1A POWERMITE1 |
25.932 |
|
- | Schottky | 20V | 1A | 530mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 20V | - | Surface Mount | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 30A TO247 |
15.276 |
|
- | Standard | 600V | 30A | 2.4V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 30A TO247 |
6.540 |
|
- | Standard | 1000V | 30A | 3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 295ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1.2KV 30A TO247 |
7.260 |
|
- | Standard | 1200V | 30A | 3.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 320ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 40A TO247 |
88.380 |
|
- | Standard | 1000V | 40A | 3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 60A TO247 |
6.912 |
|
- | Standard | 600V | 60A | 2.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 60A TO247 |
6.318 |
|
- | Standard | 400V | 60A | 1.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 37ns | 250µA @ 400V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 175V 100MA DO35 |
7.260 |
|
- | Standard | 175V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 175V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 75A TO247 |
14.460 |
|
- | Standard | 600V | 75A | 2.5V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 31ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
6.312 |
|
- | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A D5A |
6.444 |
|
- | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A D5A |
7.284 |
|
- | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 70V 33MA DO35 |
84 |
|
- | Schottky | 70V | 33mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 1A AXIAL |
7.932 |
|
- | Standard | 50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 3A AXIAL |
15 |
|
- | Standard | 1000V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 50V 33MA DO213AA |
8.220 |
|
- | Schottky | 50V | 33mA | 410mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 3A AXIAL |
9.084 |
|
- | Standard | 100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 100V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1A D5A |
9.720 |
|
- | Standard | 600V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 600V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 3A AXIAL |
8.226 |
|
- | Standard | 50V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 3A B-MELF |
9.792 |
|
- | Standard | 1000V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 660V 1.75A A-MELF |
6.492 |
|
- | Standard | 660V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 660V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 700V 10A TO220-3 |
8.910 |
|
- | Silicon Carbide Schottky | 700V | 10A (DC) | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-220-3 | TO-220-3 | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 1.2KV 10A TO220-2 |
6.624 |
|
- | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-220-2 | TO-220 [K] | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 1.2KV 15A TO247 |
8.406 |
|
- | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.5V @ 15A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-247-2 | TO-247 | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 700V 30A TO220-3 |
7.056 |
|
- | Silicon Carbide Schottky | 700V | 30A (DC) | 1.5V @ 30A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-220-3 | TO-220-3 | - |