Microchip Technology Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerMicrochip Technology
Datensätze 185
Seite 7/7
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Microchip Technology |
MOSFET N-CH 25V 100A 8PDFN |
3.474 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 1.6V @ 250µA | 22nC @ 4.5V | +10V, -8V | 1635pF @ 12.5V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Microchip Technology |
MOSFET N-CH 25V 8PDFN |
5.382 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 2.3mOhm @ 25A, 10V | 1.6V @ 250µA | 29nC @ 4.5V | +10V, -8V | 2310pF @ 12.5V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Microchip Technology |
MOSFET N-CH 25V 100A 8PDFN |
3.474 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 3.3V, 10V | 1.9mOhm @ 25A, 10V | 1.6V @ 250µA | 37nC @ 4.5V | +10V, -8V | 2925pF @ 12.5V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Microchip Technology |
MOSFET P-CH 240V 0.316A SOT89-3 |
5.058 |
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- | P-Channel | MOSFET (Metal Oxide) | 240V | 316mA (Tj) | 4.5V, 10V | 8Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 200pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET P-CHANNEL 16V 1A |
3.276 |
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TinyFET® | P-Channel | MOSFET (Metal Oxide) | 16V | 1A (Ta) | - | 450mOhm @ 100mA, 10V | 1.4V @ 250µA | - | - | - | - | 568mW (Ta) | -55°C ~ 150°C (TJ) | - | - | - |