ISSI, Integrated Silicon Solution Inc Speicher
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KategorieHalbleiter / Speicher-ICs / Speicher
HerstellerISSI, Integrated Silicon Solution Inc
Datensätze 4.379
Seite 61/146
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Serie | Speichertyp | Speicherformat | Technologie | Speichergröße | Speicherschnittstelle | Taktfrequenz | Schreibzykluszeit - Wort, Seite | Zugriffszeit | Spannung - Versorgung | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA |
5.868 |
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- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4.5M PARALLEL 165BGA |
4.374 |
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- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (256K x 18) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 165-TFBGA | 165-PBGA (13x15) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
3.276 |
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- | Volatile | DRAM | SDRAM - Mobile | 512Mb (16M x 32) | Parallel | 166MHz | - | 5.5ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA |
8.568 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA |
7.866 |
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- | Volatile | DRAM | SDRAM - DDR3L | 2Gb (128M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 16M PARALLEL 48MGA |
6.354 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Mb (1M x 16) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 16M PARALLEL 48TSOP |
8.496 |
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- | Volatile | SRAM | SRAM - Asynchronous | 16Mb (1M x 16) | Parallel | - | 45ns | 45ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 144LFBGA |
6.336 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (16M x 32) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 144-LFBGA | 144-LFBGA (12x12) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 66TSOP II |
5.922 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 66TSOP II |
2.142 |
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- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 100LQFP |
2.394 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4Mb (128K x 32) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | -40°C ~ 125°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 100LQFP |
6.858 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4Mb (128K x 32) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 125°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 400MHZ |
4.212 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2-S4 | 2Gb (64M x 32) | Parallel | 400MHz | 15ns | - | 1.14V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 134-TFBGA | 134-TFBGA (10x11.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 90LFBGA |
7.128 |
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- | Volatile | DRAM | SDRAM - Mobile LPDDR | 64Mb (2M x 32) | Parallel | 166MHz | 15ns | 5.5ns | 1.7V ~ 1.95V | 0°C ~ 70°C (TA) | Surface Mount | 90-LFBGA | 90-LFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 84TWBGA |
3.942 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 1Gb (64M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA |
3.562 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 2Gb (128M x 16) | Parallel | 667MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 533MHZ |
6.732 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2-S4 | 2Gb (64M x 32) | Parallel | 533MHz | 15ns | - | 1.14V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 168-VFBGA | 168-VFBGA (12x12) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 16M PARALLEL 48TSOP I |
3.618 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Mb (1M x 16) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TFBGA |
5.076 |
|
- | Volatile | DRAM | SDRAM - Mobile | 512Mb (32M x 16) | Parallel | 166MHz | - | 5.5ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4.5M PARALLEL 165TFBGA |
4.428 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (128K x 36) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | -40°C ~ 125°C (TA) | Surface Mount | 165-TBGA | 165-TFBGA (13x15) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 400MHZ |
6.948 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2-S4 | 2Gb (64M x 32) | Parallel | 400MHz | 15ns | - | 1.14V ~ 1.95V | -40°C ~ 85°C (TC) | Surface Mount | 134-TFBGA | 134-TFBGA (10x11.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA |
6.948 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 5.5ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x10) |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 533MHZ |
3.348 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2-S4 | 1Gb (64M x 16) | Parallel | 533MHz | 15ns | - | 1.14V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 134-TFBGA | 134-TFBGA (10x11.5) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 144LFBGA |
2.628 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (16M x 32) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 144-LFBGA | 144-LFBGA (12x12) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 48TFBGA |
5.994 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (1M x 8) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-miniBGA (6x8) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA |
7.704 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 4Gb (256M x 16) | Parallel | 933MHz | 15ns | 20ns | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA |
4.428 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 2Gb (128M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
4.626 |
|
- | Volatile | DRAM | SDRAM - Mobile | 512Mb (16M x 32) | Parallel | 133MHz | - | 6ns | 2.3V ~ 3V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA |
8.442 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA |
5.796 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x13) |