Infineon Technologies Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 4/225
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 80V 55A TDSON-8 |
1.142.814 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 11A (Ta), 55A (Tc) | 6V, 10V | 12.3mOhm @ 33A, 10V | 3.5V @ 33µA | 25nC @ 10V | ±20V | 1870pF @ 40V | - | 2.5W (Ta), 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 55V 56A DPAK |
221.088 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 56A (Tc) | 10V | 16mOhm @ 34A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2430pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
314.094 |
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Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 4.5V, 10V | 12mOhm @ 60A, 10V | 2.1V @ 46µA | 49nC @ 10V | ±16V | 3170pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 20V 15A 8-SOIC |
72.516 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 15A (Ta) | 2.5V, 4.5V | 8.2mOhm @ 15A, 4.5V | 1.2V @ 250µA | 130nC @ 4.5V | ±12V | 7980pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N CH 40V 90A DPAK |
127.626 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 6V, 10V | 2.4mOhm @ 90A, 10V | 3.9V @ 100µA | 134nC @ 10V | ±20V | 4610pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
61.644 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 150V 13A DPAK |
157.440 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 59A |
52.782 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 59A (Tc) | 6V, 10V | 12.2mOhm @ 46A, 10V | 3.5V @ 46µA | 35nC @ 10V | ±20V | 2500pF @ 50V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 660MA SOT-223 |
28.470 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 660mA (Ta) | 0V, 10V | 1.8Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | ±20V | 430pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO252 |
26.064 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 21A 8-TSDSON |
334.638 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 21A (Tc) | 8V, 10V | 52mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | ±20V | 890pF @ 75V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N CH 200V 3.7A 8-SO |
32.328 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.7A (Ta) | 10V | 78mOhm @ 2.2A, 10V | 5V @ 100µA | 44nC @ 10V | ±20V | 1750pF @ 100V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 50A TDSON-8 |
583.698 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta), 50A (Tc) | 4.5V, 10V | 6.7mOhm @ 50A, 10V | 2.2V @ 35µA | 67nC @ 10V | ±20V | 5100pF @ 30V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 500V 0.4A SOT-223 |
248.094 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 500V | 400mA (Ta) | 10V | 4Ohm @ 400mA, 10V | 4V @ 1mA | - | ±20V | 400pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 40V 10A 8-SOIC |
211.404 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 10A (Ta) | 2.8V, 10V | 13mOhm @ 10A, 10V | 2V @ 250µA | 44nC @ 4.5V | ±12V | 3430pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 25V 33A TDSON-8 |
297.756 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 33A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2V @ 250µA | 39nC @ 10V | ±20V | 2700pF @ 12V | - | 2.5W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 21A TDSON-8 |
98.112 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 21A (Tc) | 8V, 10V | 52mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | ±20V | 890pF @ 75V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 80V 9.3A 8-SOIC |
33.066 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 9.3A (Tc) | 10V | 15mOhm @ 5.6A, 10V | 4V @ 250µA | 53nC @ 10V | ±20V | 1510pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 8TDSON |
125.370 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | 2V @ 30µA | 52nC @ 10V | ±16V | 2800pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 20A 8-SOIC |
146.604 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.32V @ 250µA | 51nC @ 4.5V | ±20V | 4310pF @ 15V | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 100V 13A DPAK |
94.416 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8 |
612.744 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 100A (Tc) | 4.5V, 10V | 2mOhm @ 30A, 10V | 2.2V @ 250µA | 93nC @ 10V | ±20V | 7200pF @ 15V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 75V 30A TO252-3 |
92.670 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 30A (Tc) | 4.5V, 10V | 20.5mOhm @ 25A, 10V | 2V @ 80µA | 72nC @ 10V | ±20V | 1650pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 10A 8-PQFN |
86.922 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Ta), 55A (Tc) | 10V | 14.9mOhm @ 33A, 10V | 4V @ 100µA | 59nC @ 10V | ±20V | 2570pF @ 25V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
N-CHANNEL_30/40V |
40.494 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 7V, 10V | 1.9mOhm @ 50A, 10V | 3.4V @ 50µA | 65nC @ 10V | ±20V | 3770pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 60V 30A TO252-3 |
52.914 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 75mOhm @ 21.5A, 10V | 4V @ 1.7mA | 48nC @ 10V | ±20V | 1535pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 56A DPAK |
354.168 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 56A (Tc) | 10V | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | ±20V | 2290pF @ 50V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 100A 8TDSON |
41.964 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 37A (Ta), 100A (Tc) | 4.5V, 10V | 1.1mOhm @ 30A, 10V | 2.2V @ 250µA | 72nC @ 10V | ±20V | 4700pF @ 15V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3 |
53.376 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4.5V, 10V | 13mOhm @ 30A, 10V | 2V @ 80µA | 69nC @ 10V | ±20V | 1800pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 90A TDSON-8 |
280.818 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 90A (Tc) | 6V, 10V | 7mOhm @ 50A, 10V | 3.5V @ 75µA | 55nC @ 10V | ±20V | 4000pF @ 50V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |