Infineon Technologies Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 223/225
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 120V SAWN WAFER |
7.164 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 80V SAWN WAFER |
2.106 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
Infineon Technologies |
MOSFET N CH 55V 16A DPAK |
7.920 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 16A (Tc) | 4.5V, 10V | 58mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9nC @ 5V | ±16V | 380pF @ 25V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH TO262-3 |
7.290 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH TO262-3 |
5.886 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Infineon Technologies |
MOSFET N-CH 1TO251-3 |
8.586 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
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Infineon Technologies |
MOSFET N-CH TO263-3 |
6.318 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET SOT223-4 |
8.244 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Infineon Technologies |
MOSFET N-CH TO263-3 |
3.690 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH TO252-5 |
4.698 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH TO220-3 |
7.416 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Infineon Technologies |
MOSFET N-CH TO220 |
6.606 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Infineon Technologies |
MOSFET N-CH BARE DIE |
6.156 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
4.410 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
2.394 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
7.200 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
7.596 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
7.344 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
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Infineon Technologies |
MOSFET N-CH |
6.354 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH |
6.930 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
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Infineon Technologies |
MOSFET N-CH BARE DIE |
4.806 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
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Infineon Technologies |
MOSFET N-CH |
7.650 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH |
8.442 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
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Infineon Technologies |
MOSFET N-CH BARE DIE |
3.654 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
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Infineon Technologies |
MOSFET N-CH |
3.924 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
3.024 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
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Infineon Technologies |
MOSFET N-CH BARE DIE |
7.668 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
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Infineon Technologies |
MOSFET N-CH BARE DIE |
6.642 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Infineon Technologies |
MOSFET N-CH 500V 7.1A TO251-3 |
5.922 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 7.1A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17nC @ 10V | ±20V | 680pF @ 100V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH |
4.788 |
|
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