Infineon Technologies Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 222/225
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
LOW POWER_LEGACY |
7.722 |
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Infineon Technologies |
LOW POWER_LEGACY |
5.256 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_LEGACY |
4.554 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_LEGACY |
8.262 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_LEGACY |
5.058 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_LEGACY |
6.534 |
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Infineon Technologies |
LOW POWER_LEGACY |
8.748 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_LEGACY |
8.514 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_LEGACY |
3.402 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_LEGACY |
3.544 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_LEGACY |
6.696 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_LEGACY |
3.762 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LV POWER MOS |
8.172 |
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Infineon Technologies |
MOSFET N-CHANNEL_55/60V |
2.448 |
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Infineon Technologies |
MOSFET N-CHANNEL_55/60V |
4.662 |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO251-3 |
5.526 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.2V @ 250µA | 38nC @ 10V | - | 3900pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CHANNEL 30V 50A TO251-3 |
5.346 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | - | 3200pF @ 15V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CHANNEL 30V 50A TO251-3 |
4.500 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 23nC @ 10V | - | 2400pF @ 15V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CHANNEL 30V 50A TO251-3 |
2.520 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | 2.2V @ 250µA | 18nC @ 10V | - | 1900pF @ 15V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CHANNEL 30V 40A TO251-3 |
4.986 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 1600pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 650V 76A TO247-4 |
3.600 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 76A (Tc) | 10V | 37mOhm @ 29.5A, 10V | 4V @ 1.48mA | 121nC @ 10V | ±20V | 5243pF @ 400V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
MOSFET COOL MOS 600V |
7.848 |
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Infineon Technologies |
MOSFET COOL MOS 600V |
4.140 |
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Infineon Technologies |
MOSFET N-CH 100V 1.2A SOT223-4 |
2.574 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1.2A (Ta) | 4.5V, 10V | 600mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7nC @ 10V | ±20V | 152.7pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
5.022 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
5.292 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
2.016 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
7.488 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
8.766 |
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Infineon Technologies |
TRANSISTOR N-CH |
4.842 |
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