Infineon Technologies Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 105/225
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 55V 22A TO220FP |
8.766 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 22A (Tc) | 4V, 10V | 35mOhm @ 12A, 10V | 2V @ 250µA | 25nC @ 5V | ±16V | 880pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 75V 82A D2PAK |
5.778 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 82A (Tc) | 10V | 13mOhm @ 43A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 3820pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 21A D2PAK |
5.580 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 21A (Tc) | 10V | 82mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 1300pF @ 25V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 43A D2PAK |
8.874 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 43A (Tc) | 10V | 42mOhm @ 22A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 2400pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 48A D2PAK |
3.924 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 48A (Tc) | 10V | 23mOhm @ 29A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1360pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 64A D2PAK |
5.238 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 14mOhm @ 34A, 10V | 1V @ 250µA | 43nC @ 4.5V | ±16V | 1900pF @ 25V | - | 3.1W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 64A D2PAK |
4.122 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 1V @ 250µA | 33nC @ 4.5V | ±16V | 1650pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 38A D2PAK |
7.812 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 38A (Tc) | 4.5V, 10V | 26mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | 870pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 140A D2PAK |
7.200 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 6mOhm @ 71A, 10V | 1V @ 250µA | 140nC @ 4.5V | ±16V | 5000pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 55A DPAK |
6.696 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 19mOhm @ 33A, 10V | 1V @ 250µA | 50nC @ 4.5V | ±16V | 1600pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 64A TO-247AC |
4.482 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 64A (Tc) | 10V | 16mOhm @ 37A, 10V | 4V @ 250µA | 89nC @ 10V | ±20V | 1900pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 100V 33A TO-247AC |
2.142 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 33A (Tc) | 10V | 52mOhm @ 16A, 10V | 4V @ 250µA | 94nC @ 10V | ±20V | 1400pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 100V 42A TO-247AC |
4.482 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 36mOhm @ 23A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 1900pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 30V 5.8A 8-SOIC |
7.254 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 5.8A (Ta) | 4.5V, 10V | 35mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | ±20V | 510pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 2.3A 6-TSOP |
4.950 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 2.3A (Ta) | 4.5V, 10V | 200mOhm @ 1.6A, 10V | 1V @ 250µA | 11nC @ 10V | ±20V | 170pF @ 25V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(SOT23-6) | SOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 20V 2.4A 6-TSOP |
7.560 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 2.4A (Ta) | 2.7V, 4.5V | 200mOhm @ 1.6A, 4.5V | 700mV @ 250µA | 8.8nC @ 4.5V | ±12V | 210pF @ 15V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(SOT23-6) | SOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 55V 49A D2PAK |
8.478 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 49A (Tc) | 10V | 17.5mOhm @ 25A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1470pF @ 25V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 1.2A SOT-23 |
8.838 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 1.2A (Ta) | 2.7V, 4.5V | 250mOhm @ 930mA, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | ±12V | 110pF @ 15V | - | 540mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 20V 110A D2PAK |
2.574 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 110A (Tc) | 4.5V, 7V | 7mOhm @ 64A, 7V | 700mV @ 250µA | 110nC @ 4.5V | ±10V | 4700pF @ 15V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 20V 24A D2PAK |
3.906 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 24A (Tc) | 2.5V, 4.5V | 42mOhm @ 12A, 4.5V | 1V @ 250µA | 44nC @ 4.5V | ±8V | 1460pF @ 15V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 35A DPAK |
7.758 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 31mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | 870pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 8.5A 8-SOIC |
2.016 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.5A (Ta) | 4.5V, 10V | 22mOhm @ 4A, 10V | 1V @ 250µA | 57nC @ 10V | ±20V | 1200pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 55A I-PAK |
3.312 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 19mOhm @ 33A, 10V | 1V @ 250µA | 50nC @ 4.5V | ±16V | 1600pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 42A I-PAK |
2.106 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 85A D2PAK |
2.016 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 3210pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 41A D2PAK |
5.202 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | ±30V | 2260pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 57A D2PAK |
4.482 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 57A (Tc) | 10V | 23mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 3130pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 9.7A D2PAK |
2.790 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 9.7A (Tc) | 10V | 200mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 330pF @ 25V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 40A D2PAK |
3.726 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 60mOhm @ 24A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 2700pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 55V 31A D2PAK |
4.914 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 60mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1200pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |