Diodes Incorporated Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerDiodes Incorporated
Datensätze 1.718
Seite 11/58
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Hersteller |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Diodes Incorporated |
MOSFET P-CH 100V 0.31A SOT223 |
51.156 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 310mA (Ta) | 10V | 8Ohm @ 375mA, 10V | 3.5V @ 1mA | - | ±20V | 100pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET BVDSS: 25V 30V POWERDI506 |
24.762 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 135A (Tc) | 5V, 10V | 3.8mOhm @ 20A, 10V | 2.6V @ 250µA | 127nC @ 10V | ±25V | 3775pF @ 15V | - | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 450V 140MA SOT-223 |
105.792 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 140mA (Ta) | 10V | 50Ohm @ 100mA, 10V | 3V @ 1mA | - | ±20V | 70pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 200V 120MA TO92-3 |
263.898 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 120mA (Ta) | 2.6V, 5V | 30Ohm @ 100mA, 5V | - | - | ±20V | - | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 2.1A SOT223 |
34.284 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.1A (Ta) | 5V, 10V | 330mOhm @ 3A, 10V | 3V @ 1mA | - | ±20V | 350pF @ 25V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 60V 22A |
53.130 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta), 90A (Tc) | 4.5V, 10V | 2.8mOhm @ 25A, 10V | 3V @ 250µA | 96.3nC @ 10V | ±20V | 4515pF @ 30V | - | 2.1W (Ta), 105W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET P-CH 100V 0.14A TO92-3 |
12.228 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 140mA (Ta) | 10V | 20Ohm @ 150mA, 10V | 3.5V @ 1mA | - | ±20V | 50pF @ 25V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 100V 320MA TO92-3 |
80.934 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 320mA (Ta) | 10V | 4Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 75pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 450MA TO92-3 |
44.076 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 450mA (Ta) | 10V | 2Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 75pF @ 18V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 100V 1.67A SOT223 |
26.454 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.67A (Ta) | 5V, 10V | 540mOhm @ 3.3A, 10V | 3V @ 1mA | - | ±20V | 350pF @ 25V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 60V 600MA TO92-3 |
89.592 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 600mA (Ta) | 5V, 10V | 1Ohm @ 1.5A, 10V | 3V @ 1mA | - | ±20V | 100pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 600MA TO92-3 |
33.528 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 600mA (Ta) | 5V, 10V | 1Ohm @ 1.5A, 10V | 3V @ 1mA | - | ±20V | 100pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 270MA TO92-3 |
166.356 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 10V | 5Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 35pF @ 18V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 100V 320MA TO92-3 |
61.248 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 320mA (Ta) | 5V, 10V | 3Ohm @ 500mA, 10V | 1.5V @ 1mA | - | ±20V | 75pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 200V 180MA TO92-3 |
25.596 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 180mA (Ta) | 3V, 5V | 10Ohm @ 250mA, 5V | 1.5V @ 1mA | - | ±20V | 85pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 2.1A SOT223 |
29.502 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.1A (Ta) | 5V, 10V | 330mOhm @ 3A, 10V | 3V @ 1mA | - | ±20V | 350pF @ 25V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 60V 270MA TO92-3 |
55.230 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | - | ±20V | 60pF @ 10V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET P-CH 60V 160MA TO92-3 |
89.238 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 160mA (Ta) | 10V | 14Ohm @ 200mA, 10V | 3.5V @ 1mA | - | ±20V | 50pF @ 18V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 270MA TO92-3 |
63.594 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±20V | 60pF @ 25V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 100V 200MA TO92-3 |
32.970 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 200mA (Ta) | 10V | 10Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 40pF @ 25V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET P-CH 45V 230MA E-LINE |
161.322 |
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- | P-Channel | MOSFET (Metal Oxide) | 45V | 230mA (Ta) | 10V | 14Ohm @ 200mA, 10V | 3.5V @ 1mA | - | ±20V | 60pF @ 10V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Diodes Incorporated |
MOSFET P-CH 60V 280MA TO92-3 |
151.950 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 10V | 5Ohm @ 500mA, 10V | 3.5V @ 1mA | - | ±20V | 100pF @ 18V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET P-CH 100V 0.23A TO92-3 |
20.142 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 230mA (Ta) | 10V | 8Ohm @ 375mA, 10V | 3.5V @ 1mA | - | ±20V | 100pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET P-CH 240V 0.2A TO92-3 |
28.860 |
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- | P-Channel | MOSFET (Metal Oxide) | 240V | 200mA (Ta) | 3.5V, 10V | 9Ohm @ 200mA, 10V | 2V @ 1mA | - | ±40V | 200pF @ 25V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 100V 0.9A TO92-3 |
48.528 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 900mA (Ta) | 5V, 10V | 500mOhm @ 3A, 10V | 3V @ 1mA | - | ±20V | 350pF @ 25V | - | 850mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 1.1A TO92-3 |
30.792 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 1.1A (Ta) | 5V, 10V | 330mOhm @ 3A, 10V | 3V @ 1mA | - | ±20V | 350pF @ 25V | - | 850mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Diodes Incorporated |
MOSFET N-CH 60V 540MA 3-DFN |
27.096 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 540mA (Ta) | 5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 1mA | 0.87nC @ 10V | ±20V | 30.2pF @ 25V | - | 430mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1212-3 | 3-UDFN |
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Diodes Incorporated |
MOSFET P-CH 30V 3.1A TSOT26 |
46.986 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 3.1A (Ta) | 2.5V, 10V | 75mOhm @ 4.2A, 10V | 1.5V @ 250µA | 19.8nC @ 10V | ±12V | 839pF @ 15V | - | 1.15W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 30V 0.2A X2-DFN0606 |
82.836 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 200mA (Ta) | 1.2V, 10V | 5Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.35nC @ 4.5V | ±10V | 22.5pF @ 15V | - | 390mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN0606-3 | 3-XFDFN |
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Diodes Incorporated |
MOSFET N-CH 12V 3.2A DFN1010-3 |
24.588 |
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- | N-Channel | MOSFET (Metal Oxide) | 12V | 3.2A (Ta) | 1.5V, 4.5V | 45mOhm @ 3.2A, 4.5V | 1V @ 250µA | 4.8nC @ 4.5V | ±8V | 375pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1010-3 | 3-XFDFN |