TPCF8402(TE85L Datenblatt
TPCF8402(TE85L Datenblatt
Total Pages: 11
Größe: 268,74 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
Dieses Datenblatt behandelt 1 Teilenummern:
TPCF8402(TE85L,F,M
Toshiba Semiconductor and Storage Hersteller Toshiba Semiconductor and Storage Serie - FET-Typ N and P-Channel FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 4A, 3.2A Rds On (Max) @ Id, Vgs 50mOhm @ 2A, 10V Vgs (th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Eingangskapazität (Ciss) (Max) @ Vds 470pF @ 10V Leistung - max 330mW Betriebstemperatur 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SMD, Flat Lead Lieferantengerätepaket VS-8 (2.9x1.5) |