SI4618DY-T1-GE3 Datenblatt
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Hersteller Vishay Siliconix Serie TrenchFET® FET-Typ 2 N-Channel (Half Bridge) FET-Funktion Standard Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 8A, 15.2A Rds On (Max) @ Id, Vgs 17mOhm @ 8A, 10V Vgs (th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Eingangskapazität (Ciss) (Max) @ Vds 1535pF @ 15V Leistung - max 1.98W, 4.16W Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket 8-SO |
Hersteller Vishay Siliconix Serie TrenchFET® FET-Typ 2 N-Channel (Half Bridge) FET-Funktion Standard Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 8A, 15.2A Rds On (Max) @ Id, Vgs 17mOhm @ 8A, 10V Vgs (th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Eingangskapazität (Ciss) (Max) @ Vds 1535pF @ 15V Leistung - max 1.98W, 4.16W Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket 8-SO |
