IRF6798MTRPBF Datenblatt
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Hersteller Infineon Technologies Serie HEXFET® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 37A (Ta), 197A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.3mOhm @ 37A, 10V Vgs (th) (Max) @ Id 2.35V @ 150µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 4.5V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 6560pF @ 13V FET-Funktion Schottky Diode (Body) Verlustleistung (max.) 2.8W (Ta), 78W (Tc) Betriebstemperatur -40°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket DIRECTFET™ MX Paket / Fall DirectFET™ Isometric MX |
Hersteller Infineon Technologies Serie HEXFET® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 37A (Ta), 197A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.3mOhm @ 37A, 10V Vgs (th) (Max) @ Id 2.35V @ 150µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 4.5V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 6560pF @ 13V FET-Funktion Schottky Diode (Body) Verlustleistung (max.) 2.8W (Ta), 78W (Tc) Betriebstemperatur -40°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket DIRECTFET™ MX Paket / Fall DirectFET™ Isometric MX |
