FDMS1D4N03S Datenblatt
FDMS1D4N03S Datenblatt
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ON Semiconductor
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FDMS1D4N03S
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Hersteller ON Semiconductor Serie PowerTrench®, SyncFET™ FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 211A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.09mOhm @ 38A, 10V Vgs (th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 65nC @ 4.5V Vgs (Max) ±16V Eingangskapazität (Ciss) (Max) @ Vds 10250pF @ 15V FET-Funktion Schottky Diode (Body) Verlustleistung (max.) 74W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 8-PQFN (5x6) Paket / Fall 8-PowerTDFN |