Advanced Linear Devices Inc. Transistoren - FETs, MOSFETs - Arrays
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Arrays
HerstellerAdvanced Linear Devices Inc.
Datensätze 125
Seite 5/5
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Serie | FET-Typ | FET-Funktion | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Eingangskapazität (Ciss) (Max) @ Vds | Leistung - max | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8MSOP |
3.384 |
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EPAD® | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 5.9V | 3.35V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Advanced Linear Devices Inc. |
MOSFET N/P-CH 10.6V 8MSOP |
5.256 |
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- | N and P-Channel Complementary | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 8MSOP |
6.138 |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 8DIP |
5.688 |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 8SOIC |
5.040 |
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