Toshiba Semiconductor and Storage Transistoren - FETs, MOSFETs - RF
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - RF
HerstellerToshiba Semiconductor and Storage
Datensätze 21
Seite 1/1
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | Transistortyp | Frequenz | Gewinn | Spannungstest | Nennstrom (Ampere) | Rauschzahl | Stromtest | Leistung - Leistung | Spannung - Nennspannung | Paket / Fall | Lieferantengerätepaket |
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Toshiba Semiconductor and Storage |
JFET N-CH SOT23 |
70.608 |
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- | N-Channel JFET | 1kHz | - | 10V | - | 1dB | 500µA | - | - | TO-236-3, SC-59, SOT-23-3 | SC-59 |
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Toshiba Semiconductor and Storage |
FET RF 12.5V 500MHZ USQ |
4.518 |
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- | N-Channel | 500MHz | 26dB | 6V | 30mA | 1.4dB | 10mA | - | 12.5V | SC-82A, SOT-343 | USQ |
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Toshiba Semiconductor and Storage |
MOSFET N-CH SMQ |
5.472 |
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- | N-Channel Dual Gate | 800MHz | 22.5dB | 6V | 30mA | 2.5dB | 10mA | - | 12.5V | SC-61AA | SMQ |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 12.5 30MA SMQ |
6.048 |
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- | N-Channel Dual Gate | 500MHz | 26dB | 6V | 30mA | 1.4dB | 10mA | - | 12.5V | SC-61AA | SMQ |
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Toshiba Semiconductor and Storage |
MOSFET N-CH RF-CST3 |
15.972 |
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- | N-Channel | 520MHz | 14.8dB | 3.6V | 3A | - | 500mA | 3W | 16V | 2-SMD, No Lead Exposed Pad | RF-CST3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH PW-X |
17.712 |
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- | N-Channel | 520MHz | 11.7dB | 9.6V | 5A | - | 50mA | 7.5W | 36V | TO-271AA | PW-X |
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Toshiba Semiconductor and Storage |
MOSFET N-CH PW-X |
16.896 |
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- | N-Channel | 520MHz | 10.8dB | 7.2V | 4A | - | 750mA | 12W | 20V | TO-271AA | PW-X |
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Toshiba Semiconductor and Storage |
JFET N-CH SOT23 |
6.678 |
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- | N-Channel JFET | 1kHz | - | 10V | - | 1dB | 500µA | - | - | TO-236-3, SC-59, SOT-23-3 | SC-59 |
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Toshiba Semiconductor and Storage |
MOSFET RF N CH 10V 500MA |
6.066 |
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- | N-Channel | 849MHz | - | - | 500mA | - | - | 23dBmW | 10V | TO-243AA | PW-MINI |
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Toshiba Semiconductor and Storage |
MOSFET N-CH PW-MINI |
6.216 |
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- | N-Channel | 470MHz | 12dB | 4.5V | 1A | - | 200mA | 32dBm | 7.5V | TO-243AA | SC-62 |
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Toshiba Semiconductor and Storage |
MOSF RF N CH 20V 1A PW-MINI |
8.472 |
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- | N-Channel | 520MHz | 14.9dB | 7.2V | 1A | - | 50mA | 630mW | 20V | TO-243AA | SC-62 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH PW-MINI |
8.856 |
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- | N-Channel | 520MHz | 10.8dB | 7.2V | 1A | - | 100mA | 1.2W | 20V | TO-243AA | PW-MINI |
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Toshiba Semiconductor and Storage |
MOSFET N-CH PW-X |
15.468 |
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- | N-Channel | 470MHz | 11.5dB | 6V | 3A | - | 250mA | 36.5dBmW | 12V | SC-70, SOT-323 | SC-70 |
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Toshiba Semiconductor and Storage |
JFET N-CH SOT23 |
5.022 |
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- | N-Channel JFET | 1kHz | - | 10V | - | 1dB | 500µA | - | - | TO-236-3, SC-59, SOT-23-3 | SC-59 |
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Toshiba Semiconductor and Storage |
FET RF 12.5V 800MHZ USQ |
6.174 |
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- | N-Channel Dual Gate | 800MHz | 22dB | 6V | 30mA | 2.5dB | 10mA | - | 12.5V | SC-82A, SOT-343 | USQ |
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Toshiba Semiconductor and Storage |
MOSF RF N CH 30V 1A PW-MINI |
2.142 |
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- | N-Channel | 520MHz | 14.9dB | 9.6V | 1A | - | 50mA | 630mW | 30V | TO-243AA | SC-62 |
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Toshiba Semiconductor and Storage |
MOSF RF N CH 10V PW-X |
3.042 |
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- | N-Channel | 470MHz | 13.5dB | 4.5V | 3A | - | 50mA | 33.5dBmW | 10V | TO-271AA | PW-X |
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Toshiba Semiconductor and Storage |
MOSF RF N CH 30V 5A PW-X |
2.034 |
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- | N-Channel | 520MHz | 11.7dB | 9.6V | 5A | - | 50mA | 7.5W | 30V | TO-271AA | PW-X |
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Toshiba Semiconductor and Storage |
FET RF N-CH 10V 470 MHZ PW-MINI |
2.628 |
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- | N-Channel | 470MHz | 8dB | 4.5V | 500mA | - | 50mA | 28dbm | 10V | TO-243AA | PW-MINI |
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Toshiba Semiconductor and Storage |
MOSF RF N CH 20V 3A PW-X |
5.238 |
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- | N-Channel | 520MHz | 11.4dB | 7.2V | 3A | - | 500mA | 7W | 20V | TO-271AA | PW-X |
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Toshiba Semiconductor and Storage |
MOSFET N-CH PW-MINI |
5.832 |
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- | N-Channel | 470MHz | 13.3dB | 6V | 2A | - | 500mA | 4.3W | 16V | TO-243AA | PW-MINI |