Toshiba Semiconductor and Storage Zenerdioden - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Zenerdioden - Single
HerstellerToshiba Semiconductor and Storage
Datensätze 38
Seite 1/2
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Spannung - Zener (Nom) (Vz) | Toleranz | Leistung - max | Impedanz (Max) (Zzt) | Strom - Umkehrleckage @ Vr | Spannung - Vorwärts (Vf) (Max) @ If | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
DIODE ZENER 6.8V 700MW SFLAT |
21.842 |
|
- | 6.8V | ±10% | 700mW | 60 Ohms | 10µA @ 3V | 1V @ 200mA | -40°C ~ 150°C | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE ZENER 7.5V 700MW SFLAT |
110.085 |
|
- | 7.5V | ±10% | 700mW | 30 Ohms | 10µA @ 4.5V | 1V @ 200mA | -40°C ~ 150°C | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE ZENER 15V 700MW SFLAT |
13.593 |
|
- | 15V | ±10% | 700mW | 30 Ohms | 10µA @ 10V | 1V @ 200mA | -40°C ~ 150°C | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
7.110 |
|
- | 6.2V | ±9.68% | 700mW | 60 Ohms | 10µA @ 3V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
7.524 |
|
- | 10V | ±10% | 700mW | 30 Ohms | 10µA @ 6V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
8.388 |
|
- | 11V | ±10% | 700mW | 30 Ohms | 10µA @ 7V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
2.862 |
|
- | 12V | ±10% | 700mW | 30 Ohms | 10µA @ 8V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
2.736 |
|
- | 13V | ±10% | 700mW | 30 Ohms | 10µA @ 9V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
2.808 |
|
- | 16V | ±10% | 700mW | 30 Ohms | 10µA @ 11V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
4.320 |
|
- | 18V | ±10% | 700mW | 30 Ohms | 10µA @ 13V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
7.362 |
|
- | 20V | ±10% | 700mW | 30 Ohms | 10µA @ 14V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
7.488 |
|
- | 22V | ±10% | 700mW | 30 Ohms | 10µA @ 16V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
10.555 |
|
- | 24V | ±10% | 700mW | 30 Ohms | 10µA @ 17V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
8.640 |
|
- | 27V | ±10% | 700mW | 30 Ohms | 10µA @ 19V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
5.166 |
|
- | 30V | ±10% | 700mW | 30 Ohms | 10µA @ 21V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
6.282 |
|
- | 36V | ±10% | 700mW | 30 Ohms | 10µA @ 28.8V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
44.255 |
|
- | 39V | ±10% | 700mW | 35 Ohms | 10µA @ 31.2V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
5.958 |
|
- | 43V | ±10% | 700mW | 40 Ohms | 10µA @ 34.4V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
2.142 |
|
- | 47V | ±10% | 700mW | 65 Ohms | 10µA @ 37.6V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ=3000 V |
9.751 |
|
- | 12V | ±10% | 2W | 30 Ohms | 10µA @ 8V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ=3000 V |
2.088 |
|
- | 13V | ±10% | 2W | 30 Ohms | 10µA @ 9V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ=3000 V |
4.374 |
|
- | 15V | ±10% | 2W | 30 Ohms | 10µA @ 10V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ=3000 V |
2.664 |
|
- | 16V | ±10% | 2W | 30 Ohms | 10µA @ 11V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ=3000 V |
2.826 |
|
- | 18V | ±10% | 2W | 30 Ohms | 10µA @ 13V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ=3000 V |
3.852 |
|
- | 20V | ±10% | 2W | 30 Ohms | 10µA @ 14V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ=3000 V |
2.430 |
|
- | 22V | ±10% | 2W | 30 Ohms | 10µA @ 16V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ=3000 V |
6.948 |
|
- | 24V | ±10% | 2W | 30 Ohms | 10µA @ 17V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ=3000 V |
8.424 |
|
- | 27V | ±10% | 2W | 30 Ohms | 10µA @ 19V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE ZENER 10V 700MW SFLAT |
3.132 |
|
- | 10V | ±10% | 700mW | 30 Ohms | 10µA @ 6V | 1V @ 200mA | -40°C ~ 150°C | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
|
Toshiba Semiconductor and Storage |
DIODE ZENER 11V 700MW SFLAT |
4.518 |
|
- | 11V | ±10% | 700mW | 30 Ohms | 10µA @ 7V | 1V @ 200mA | -40°C ~ 150°C | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |