Taiwan Semiconductor Corporation Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerTaiwan Semiconductor Corporation
Datensätze 5.388
Seite 20/180
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 10A TO220AB |
19.116 |
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- | Schottky | 45V | 10A | 510mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 15A TO220AB |
18.228 |
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- | Schottky | 60V | 15A | 600mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 20A TO220AB |
19.836 |
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- | Schottky | 150V | 20A | 860mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 30A TO247AD |
16.548 |
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- | Standard | 600V | 30A | 1.7V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 30A TO247AD |
8.334 |
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- | Standard | 200V | 30A | 950mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 3A DO201AD |
16.500 |
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- | Schottky | 40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 3A DO201AD |
13.236 |
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- | Schottky | 60V | 3A | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 3A DO201AD |
12.792 |
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- | Schottky | 150V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO201AD |
14.604 |
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- | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO201AD |
16.788 |
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- | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 10A TO220AC |
15.720 |
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- | Schottky | 60V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 5A TO220AB |
19.776 |
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- | Schottky | 60V | 5A | 650mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 10A TO220AB |
22.980 |
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- | Schottky | 200V | 10A | 900mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 200V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 10A ITO220AB |
17.688 |
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- | Standard | 200V | 10A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 70pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 10A TO220AB |
9.708 |
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- | Standard | 400V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A TO220AC |
7.512 |
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- | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 5A ITO220AC |
22.140 |
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- | Standard | 200V | 5A | 975mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 70pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A TO220AC |
20.136 |
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- | Standard | 600V | 8A | 2.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 30µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 10A TO220AB |
21.420 |
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- | Schottky | 100V | 10A | 790mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A ITO220AB |
22.320 |
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- | Standard | 600V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 10A TO220AB |
22.152 |
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- | Schottky | 150V | 10A | 960mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 10A TO220AB |
23.700 |
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- | Schottky | 100V | 10A | 840mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 120V 10A TO220AB |
22.476 |
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- | Schottky | 120V | 10A | 930mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 120V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 10A TO220AB |
19.944 |
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- | Schottky | 200V | 10A | 990mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 10A TO220AB |
17.532 |
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- | Schottky | 60V | 10A | 650mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 10A TO220AB |
19.320 |
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- | Schottky | 45V | 10A | 530mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 45V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 10A TO220AB |
19.848 |
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- | Schottky | 60V | 10A | 630mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 60V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A TO220AC |
11.412 |
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- | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 5A TO220AB |
23.004 |
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- | Schottky | 200V | 5A | 910mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 15A TO220AB |
17.712 |
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- | Schottky | 200V | 15A | 960mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |