Taiwan Semiconductor Corporation Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerTaiwan Semiconductor Corporation
Datensätze 5.388
Seite 19/180
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A SUB SMA |
5.040 |
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- | Standard | 1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | 15pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 3A SOD123W |
6.282 |
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- | Schottky | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 200V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO214AB |
18.756 |
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- | Standard | 600V | 3A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 600V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 4A DO214AA |
17.532 |
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- | Schottky | 40V | 4A | 500mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 235pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 2A DO214AC |
5.202 |
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- | Standard | 50V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 5A DO214AB |
18.816 |
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- | Standard | 1000V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 1000V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
20.256 |
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- | Standard | 200V | 3A | 875mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A DO214AB |
19.992 |
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- | Standard | 600V | 8A | 985mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 48pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 8A DO214AB |
17.688 |
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- | Standard | 800V | 8A | 985mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 48pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 3A DO214AA |
19.272 |
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- | Standard | 300V | 3A | 1.13V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 41pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 5A DO214AB |
21.348 |
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- | Standard | 100V | 5A | 1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 100V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 5A DO214AB |
16.608 |
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- | Standard | 50V | 5A | 1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 50V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 12A DO214AB |
17.580 |
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- | Standard | 1000V | 12A | 1.1V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 1000V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 5A DO214AB |
15.648 |
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- | Standard | 800V | 5A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 5A DO214AB |
20.736 |
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- | Standard | 600V | 5A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 4A DO214AB |
15.756 |
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- | Standard | 600V | 4A | 1.15V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 600V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 5A DO214AA |
15.708 |
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- | Schottky | 100V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AA |
15.564 |
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- | Standard | 200V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO214AA |
16.452 |
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Automotive, AEC-Q101 | Standard | 600V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO214AA |
20.772 |
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- | Standard | 600V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 5A 150V DO-214AB |
15.960 |
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- | Schottky | 150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
5A, 50V, TRENCH SCHOTTKY RECTIFI |
3.438 |
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Automotive, AEC-Q101 | Schottky | 50V | 5A | 540mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 50V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 15A DO214AB |
21.912 |
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- | Standard | 400V | 15A | 1.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 400V | 93pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 8A 100V DO-214AB |
21.084 |
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- | Schottky | 100V | 8A | 900mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 120V 15A TO277A |
7.488 |
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- | Schottky | 120V | 15A | 750mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 5A DO214AB |
19.836 |
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- | Schottky | 60V | 5A | 750mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 5A DO214AB |
19.644 |
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- | Schottky | 60V | 5A | 750mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 25A 8PDFN |
4.950 |
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- | Schottky | 60V | 25A | 630mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 5A ITO220AC |
17.208 |
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- | Standard | 600V | 5A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 70pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 10A ITO220AC |
19.656 |
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- | Schottky | 200V | 10A | 1.05V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |