Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 699/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Microchip Technology |
MOSFET P-CH 6V 1.8A SOT-143 |
3.582 |
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SymFET™ | P-Channel | MOSFET (Metal Oxide) | 6V | 1.8A (Ta) | 1.8V, 4.5V | 160mOhm @ 100mA, 4.5V | 1.2V @ 250µA | - | 6V | 600pF @ 5.5V | - | 568mW (Ta) | -40°C ~ 150°C (TJ) | Surface Mount | SOT-143 | TO-253-4, TO-253AA |
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Microchip Technology |
MOSFET P-CH 6V 1.8A 8MSOP |
4.860 |
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SymFET™ | P-Channel | MOSFET (Metal Oxide) | 6V | 1.8A (Ta) | 1.8V, 4.5V | 160mOhm @ 100mA, 4.5V | 1.2V @ 250µA | - | 6V | 600pF @ 5.5V | - | 568mW (Ta) | -40°C ~ 150°C (TJ) | Surface Mount | SOT-143 | TO-253-4, TO-253AA |
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Microchip Technology |
MOSFET P-CH 6V 2A SC70-6 |
8.028 |
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- | P-Channel | MOSFET (Metal Oxide) | 6V | 2A (Ta) | 1.8V, 4.5V | 84mOhm @ 100mA, 4.5V | 1.2V @ 250µA | - | 6V | - | - | 270mW (Ta) | -40°C ~ 150°C (TJ) | Surface Mount | SC-70-6 | 6-TSSOP, SC-88, SOT-363 |
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Microchip Technology |
MOSFET P-CH 6V 2A SC70-6 |
2.844 |
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- | P-Channel | MOSFET (Metal Oxide) | 6V | 2A (Ta) | 1.8V, 4.5V | 84mOhm @ 100mA, 4.5V | 1.2V @ 250µA | - | 6V | - | - | 270mW (Ta) | -40°C ~ 150°C (TJ) | Surface Mount | SC-70-6 | 6-TSSOP, SC-88, SOT-363 |
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ON Semiconductor |
MOSFET N-CH 500V 18A TO-220F |
8.154 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 18A (Tc) | 10V | 265mOhm @ 9A, 10V | 5V @ 250µA | 55nC @ 10V | ±30V | 3290pF @ 25V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 30V 14A POWER56 |
2.772 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 27A (Tc) | 4.5V, 10V | 9mOhm @ 14A, 10V | 3V @ 250µA | 27nC @ 10V | ±20V | 1680pF @ 15V | - | 2.5W (Ta), 37.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (5x6), Power56 | 8-PowerWDFN |
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STMicroelectronics |
MOSFET N-CH 800V 45A ISOTOP |
3.580 |
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SuperFREDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 45A (Tc) | 10V | 130mOhm @ 22.5A, 10V | 4.5V @ 150µA | 781nC @ 10V | ±30V | 26000pF @ 25V | - | 600W (Tc) | -65°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | ISOTOP |
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ON Semiconductor |
MOSFET N-CH 900V 11A TO-3P |
8.154 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 1.1Ohm @ 5.5A, 10V | 5V @ 250µA | 80nC @ 10V | ±30V | 3290pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET P-CH 30V 5.5A 6-TSOP |
6.480 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 5.5A (Ta) | 4.5V, 10V | 43mOhm @ 5.5A, 10V | 2V @ 40µA | 29nC @ 10V | ±20V | 805pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 25V 50A D2PAK |
5.724 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 8.9mOhm @ 30A, 10V | 2V @ 20µA | 13nC @ 5V | ±20V | 1642pF @ 15V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 30A D2PAK |
5.490 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 30A (Tc) | 4.5V, 10V | 13.6mOhm @ 30A, 10V | 2V @ 20µA | 8.3nC @ 5V | ±20V | 1043pF @ 15V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 100A D2PAK |
4.158 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 2.7mOhm @ 80A, 10V | 2V @ 250µA | 220nC @ 10V | ±20V | 8180pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 21A D2PAK |
8.082 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 21A (Tc) | 10V | 80mOhm @ 15A, 10V | 4V @ 44µA | 38.4nC @ 10V | ±20V | 865pF @ 25V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 35A D2PAK |
8.190 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 44mOhm @ 26.4A, 10V | 4V @ 83µA | 65nC @ 10V | ±20V | 1570pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 42A D2PAK |
8.190 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 42A (Tc) | 4.5V, 10V | 12.6mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | ±20V | 1130pF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 73A D2PAK |
3.150 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 73A (Tc) | 4.5V, 10V | 8.1mOhm @ 36A, 10V | 2V @ 55µA | 46.2nC @ 10V | ±20V | 1710pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK |
8.190 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 4.9mOhm @ 55A, 10V | 2V @ 110µA | 89.7nC @ 10V | ±20V | 3320pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK |
6.552 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 5.9mOhm @ 80A, 10V | 2V @ 80µA | 68nC @ 10V | ±20V | 2530pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 100A DPAK |
4.086 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 4.2mOhm @ 50A, 10V | 2V @ 100µA | 89.7nC @ 10V | ±20V | 3320pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-5 | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
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Infineon Technologies |
MOSFET N-CH 30V 30A DPAK |
4.122 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 6.7mOhm @ 30A, 10V | 2V @ 85µA | 68nC @ 10V | ±20V | 2530pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 30A DPAK |
7.668 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | 2V @ 50µA | 41.8nC @ 10V | ±20V | 1550pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 100A TO-262 |
6.102 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 3mOhm @ 80A, 10V | 2V @ 250µA | 220nC @ 10V | ±20V | 8180pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 100A TO-220AB |
5.778 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 3.3mOhm @ 80A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 7020pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 100A TO-220AB |
8.334 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 3mOhm @ 80A, 10V | 2V @ 250µA | 220nC @ 10V | ±20V | 8180pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 25V 0.22A SOT-23 |
3.472 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 220mA (Ta) | 2.7V, 4.5V | 4Ohm @ 400mA, 4.5V | 1.06V @ 250µA | 0.7nC @ 4.5V | 8V | 9.5pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 25V 0.12A SOT-23 |
3.600 |
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- | P-Channel | MOSFET (Metal Oxide) | 25V | 120mA (Ta) | 2.7V, 4.5V | 10Ohm @ 200mA, 4.5V | 1.5V @ 250µA | 0.31nC @ 4.5V | -8V | 11pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 25V 0.46A SOT-23 |
6.984 |
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- | P-Channel | MOSFET (Metal Oxide) | 25V | 460mA (Ta) | 2.7V, 4.5V | 1.1Ohm @ 500mA, 4.5V | 1.5V @ 250µA | 1.5nC @ 4.5V | -8V | 63pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 200V 1A TO-92L |
7.002 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 1A (Tc) | 10V | 1.5Ohm @ 500mA, 10V | 4V @ 250µA | 9.3nC @ 10V | ±30V | 225pF @ 25V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92L | TO-226-3, TO-92-3 Long Body |
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ON Semiconductor |
MOSFET N-CH 20V 4.1A SSOT-6 |
7.776 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 4.1A (Ta) | 2.7V, 4.5V | 60mOhm @ 4.1A, 4.5V | 1V @ 250µA | 14nC @ 4.5V | 8V | 365pF @ 10V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 500V 0.27A TO-92L |
6.408 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 270mA (Tc) | 10V | 9Ohm @ 135mA, 10V | 3.7V @ 250µA | 5.5nC @ 10V | ±30V | 150pF @ 25V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 Long Body (Formed Leads) |