Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 638/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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IXYS |
MOSFET N-CH 800V 28A ISOPLUS247 |
5.256 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 28A (Tc) | 10V | 240mOhm @ 17A, 10V | 4V @ 8mA | 270nC @ 10V | ±20V | 7500pF @ 25V | - | 416W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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Panasonic Electronic Components |
MOSFET P-CH 30V .1A S-MINI-3P |
8.622 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 5V | 75Ohm @ 10mA, 5V | 2V @ 1µA | - | ±20V | - | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SMini3-G1 | SC-70, SOT-323 |
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Panasonic Electronic Components |
MOSFET N-CH 50V .1A S-MINI-3P |
7.740 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 2.5V, 4V | 15Ohm @ 10mA, 2.5V | 1.5V @ 1µA | - | ±7V | 12pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SMini3-G1 | SC-70, SOT-323 |
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Panasonic Electronic Components |
MOSFET N-CH 30V .1A S-MINI-3P |
3.312 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 5V | 50Ohm @ 10mA, 5V | 2V @ 1µA | - | ±20V | - | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SMini3-G1 | SC-70, SOT-323 |
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ON Semiconductor |
MOSFET N-CH 55V 75A TO-220AB |
7.470 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 210nC @ 20V | ±20V | 3200pF @ 25V | - | 285W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 55V 75A TO-247 |
3.490 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 210nC @ 20V | ±20V | 3200pF @ 25V | - | 285W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 30V 70A TO-220AB |
8.784 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 70A (Tc) | - | 10mOhm @ 70A, 10V | 4V @ 250µA | 260nC @ 20V | - | 3300pF @ 25V | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 1000V 10A ISOPLUS247 |
7.974 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 10A (Tc) | - | 1.1Ohm @ 6A, 10V | 5.5V @ 4mA | 90nC @ 10V | - | 2900pF @ 25V | - | - | - | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 1KV 22A ISOPLUS247 |
6.498 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 22A (Tc) | 10V | 390mOhm @ 12A, 10V | 5.5V @ 8mA | 267nC @ 10V | ±20V | 8700pF @ 25V | - | 416W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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Infineon Technologies |
MOSFET P-CH 20V 8.6A 8-TSSOP |
5.472 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 8.6A (Tc) | 2.5V, 4.5V | 15mOhm @ 8.6A, 4.5V | 1.2V @ 250µA | 89nC @ 5V | ±12V | 4300pF @ 15V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Diodes Incorporated |
MOSFET N-CH 50V 0.2A SOT323 |
5.544 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 10V | 3.5Ohm @ 220mA, 10V | 1.5V @ 250µA | - | ±20V | 50pF @ 10V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET P-CH 50V 130MA SC70-3 |
5.130 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 130mA (Ta) | 5V | 10Ohm @ 100mA, 5V | 2V @ 1mA | - | ±20V | 45pF @ 25V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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IXYS |
MOSFET N-CH 800V 20A TO-247AD |
3.402 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 20A (Tc) | 10V | 420mOhm @ 10A, 10V | 4.5V @ 4mA | 200nC @ 10V | ±20V | 5100pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 26A TO-247AD |
2.754 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 250mOhm @ 13A, 10V | 4.5V @ 4mA | 200nC @ 10V | ±20V | 5100pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 80A TO-247AD |
6.246 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 80A (Tc) | 10V | 28mOhm @ 500mA, 10V | 4V @ 4mA | 180nC @ 10V | ±20V | 4600pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 120A TO-264AA |
5.220 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 120A (Tc) | 10V | 17mOhm @ 60A, 10V | 4V @ 8mA | 300nC @ 10V | ±20V | 9100pF @ 25V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 800V 34A TO-264AA |
2.304 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 34A (Tc) | 10V | 240mOhm @ 17A, 10V | 5V @ 8mA | 270nC @ 10V | ±20V | 7500pF @ 25V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 600V 60A SOT-227B |
3.564 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 75mOhm @ 500mA, 10V | 4.5V @ 8mA | 380nC @ 10V | ±20V | 15000pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 200V 105A ISOPLUS247 |
5.184 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 105A (Tc) | 10V | 17mOhm @ 60A, 10V | 4V @ 8mA | 360nC @ 10V | ±20V | 9100pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 100V 165A ISOPLUS247 |
2.088 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 165A (Tc) | 10V | 8mOhm @ 90A, 10V | 4V @ 8mA | 400nC @ 10V | ±20V | 9400pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 600V 38A ISOPLUS247 |
7.848 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 38A (Tc) | 10V | 130mOhm @ 22A, 10V | 4.5V @ 4mA | 330nC @ 10V | ±20V | 8900pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 500V 32A TO-268 |
3.420 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 32A (Tc) | 10V | 160mOhm @ 16A, 10V | 4.5V @ 4mA | 190nC @ 10V | ±20V | 4925pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 300V 40A TO-268 |
6.480 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 40A (Tc) | 10V | 80mOhm @ 500mA, 10V | 4V @ 4mA | 140nC @ 10V | ±20V | 3100pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 300V 52A TO-268 |
5.688 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 52A (Tc) | 10V | 60mOhm @ 500mA, 10V | 4V @ 4mA | 150nC @ 10V | ±20V | 5300pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 600V 44A PLUS247 |
2.790 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 44A (Tc) | 10V | 130mOhm @ 22A, 10V | 4.5V @ 8mA | 330nC @ 10V | ±20V | 8900pF @ 25V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 200V 44A TO-220AB |
6.732 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 44A (Tc) | 10V | 55mOhm @ 26A, 10V | 5.5V @ 250µA | 140nC @ 10V | ±30V | 3430pF @ 25V | - | 2.4W (Ta), 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Panasonic Electronic Components |
MOSFET N-CH 50V 50MA MINI 3-PIN |
8.910 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 50mA (Ta) | 2.5V | 50Ohm @ 10mA, 2.5V | 1.1V @ 100µA | - | 10V | 4.5pF @ 5V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | Mini3-G1 | TO-236-3, SC-59, SOT-23-3 |
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IXYS |
MOSFET N-CH 100V 590A MODULE |
6.120 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 590A (Tc) | - | 2.1mOhm @ 500mA, 10V | - | 2000nC @ 10V | - | 50000pF @ 25V | - | 2200W | - | Chassis Mount | Module | Module |
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Infineon Technologies |
MOSFET P-CH 30V 7A MICRO8 |
4.932 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 26mOhm @ 7A, 10V | 2.5V @ 250µA | 69nC @ 10V | ±20V | 2204pF @ 25V | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 5.1A FLIP-FET |
5.472 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 5.1A (Ta) | 2.5V, 4.5V | 65mOhm @ 5.1A, 4.5V | 1.2V @ 250µA | 21nC @ 5V | ±12V | 1230pF @ 15V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-FlipFet™ | 4-FlipFet™ |