Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 636/999
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Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 55V 28A DPAK |
5.508 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 28A (Tc) | 4V, 10V | 40mOhm @ 17A, 10V | 2V @ 250µA | 25nC @ 5V | ±16V | 880pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 28A DPAK |
3.384 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 28A (Tc) | 4V, 10V | 40mOhm @ 17A, 10V | 2V @ 250µA | 25nC @ 5V | ±16V | 880pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
5.706 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
4.230 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 55A DPAK |
8.442 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 19mOhm @ 33A, 10V | 1V @ 250µA | 50nC @ 4.5V | ±16V | 1600pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 55A DPAK |
8.496 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 19mOhm @ 33A, 10V | 1V @ 250µA | 50nC @ 4.5V | ±16V | 1600pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 35A DPAK |
5.508 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 31mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | 870pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 35A DPAK |
4.518 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 31mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | 870pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 17A DPAK |
8.136 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | 2V @ 250µA | 34nC @ 5V | ±16V | 800pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 17A DPAK |
4.284 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | 2V @ 250µA | 34nC @ 5V | ±16V | 800pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 89A D-PAK |
3.654 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 89A (Ta) | 4.5V, 10V | 7mOhm @ 15A, 10V | 2V @ 250µA (Min) | 50nC @ 5V | ±20V | - | - | 89W (Ta) | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 89A DPAK |
5.184 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 89A (Ta) | 4.5V, 10V | 7mOhm @ 15A, 10V | 2V @ 250µA (Min) | 50nC @ 5V | ±20V | - | - | - | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 89A DPAK |
2.394 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 89A (Ta) | 4.5V, 10V | 7mOhm @ 15A, 10V | 2V @ 250µA (Min) | 50nC @ 5V | ±20V | - | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 89A DPAK |
6.534 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 89A (Ta) | 4.5V, 10V | 7mOhm @ 15A, 10V | 2V @ 250µA (Min) | 50nC @ 5V | ±20V | - | - | - | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 44A DPAK |
3.472 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 44A (Tc) | 4.5V, 10V | 16mOhm @ 15A, 10V | 3V @ 250µA | 20nC @ 5V | ±20V | 1650pF @ 25V | - | 62W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 44A DPAK |
4.698 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 44A (Tc) | 4.5V, 10V | 16mOhm @ 15A, 10V | 3V @ 250µA | 20nC @ 5V | ±20V | 1650pF @ 25V | - | 62W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 44A DPAK |
4.428 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 44A (Tc) | 4.5V, 10V | 16mOhm @ 15A, 10V | 3V @ 250µA | 20nC @ 5V | ±20V | 1650pF @ 25V | - | 62W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 10A D2PAK |
2.862 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 4V, 5V | 200mOhm @ 6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 10A D2PAK |
8.928 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 4V, 5V | 200mOhm @ 6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 17A TO-262 |
4.356 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4V, 5V | 100mOhm @ 10A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 18A D2PAK |
2.736 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 18A D2PAK |
8.568 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 17A D2PAK |
5.112 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4V, 5V | 100mOhm @ 10A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 17A D2PAK |
4.878 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4V, 5V | 100mOhm @ 10A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 17A D2PAK |
4.806 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4V, 5V | 100mOhm @ 10A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 30A TO-262 |
6.084 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4V, 5V | 50mOhm @ 18A, 5V | 2V @ 250µA | 35nC @ 5V | ±10V | 1600pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 60V 30A D2PAK |
3.492 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4V, 5V | 50mOhm @ 18A, 5V | 2V @ 250µA | 35nC @ 5V | ±10V | 1600pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Vishay Siliconix |
MOSFET N-CH 60V 30A D2PAK |
4.518 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4V, 5V | 50mOhm @ 18A, 5V | 2V @ 250µA | 35nC @ 5V | ±10V | 1600pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Vishay Siliconix |
MOSFET N-CH 60V 30A D2PAK |
3.636 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4V, 5V | 50mOhm @ 18A, 5V | 2V @ 250µA | 35nC @ 5V | ±10V | 1600pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO-262 |
4.896 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4V, 5V | 28mOhm @ 31A, 5V | 2V @ 250µA | 66nC @ 5V | ±10V | 3300pF @ 25V | - | - | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |