Transistoren - FETs, MOSFETs - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Filter anzeigen
Filter zurücksetzen
Filter anwenden
KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 606/999
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Panasonic Electronic Components |
MOSFET N-CH 800V 2A TO-220D |
7.380 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 7Ohm @ 1A, 10V | 5V @ 1mA | - | ±30V | 350pF @ 20V | - | 2W (Ta), 30W (Tc) | 150°C (TJ) | Through Hole | TO-220D-A1 | TO-220-3 Full Pack |
|
|
|
IXYS |
MOSFET N-CH 500V 32A TO-247AD |
7.560 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 32A (Tc) | 10V | 150mOhm @ 15A, 10V | 4V @ 4mA | 300nC @ 10V | ±20V | 5700pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
|
|
|
IXYS |
MOSFET N-CH 300V 40A TO-247AD |
7.020 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 40A (Tc) | 10V | 80mOhm @ 500mA, 10V | 4V @ 4mA | 140nC @ 10V | ±20V | 3100pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
|
|
|
IXYS |
MOSFET N-CH 200V 58A TO-247AD |
7.164 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 58A (Tc) | 10V | 40mOhm @ 29A, 10V | 4V @ 4mA | 140nC @ 10V | ±20V | 3600pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
|
|
|
IXYS |
MOSFET N-CH 100V 80A TO-247AD |
7.020 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 15mOhm @ 40A, 10V | 4V @ 4mA | 180nC @ 10V | ±20V | 4500pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
|
|
|
IXYS |
MOSFET N-CH 1KV 15A PLUS247 |
8.730 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 15A (Tc) | 10V | 700mOhm @ 7.5A, 10V | 4.5V @ 4mA | 220nC @ 10V | ±20V | 4500pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
|
|
|
IXYS |
MOSFET N-CH 100V 180A PLUS247 |
5.454 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 8mOhm @ 90A, 10V | 4V @ 8mA | 390nC @ 10V | ±20V | 10900pF @ 25V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
|
|
|
IXYS |
MOSFET N-CH 500V 55A PLUS247 |
8.100 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 55A (Tc) | 10V | 80mOhm @ 500mA, 10V | 4.5V @ 8mA | 330nC @ 10V | ±20V | 9400pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 110A D2PAK |
2.574 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 110A (Tc) | 4.5V, 7V | 7mOhm @ 64A, 7V | 700mV @ 250µA | 110nC @ 4.5V | ±10V | 4700pF @ 15V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET P-CH 20V 24A D2PAK |
3.906 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 24A (Tc) | 2.5V, 4.5V | 42mOhm @ 12A, 4.5V | 1V @ 250µA | 44nC @ 4.5V | ±8V | 1460pF @ 15V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 48A TO-220 |
2.556 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 48A (Ta) | 4.5V, 10V | 13mOhm @ 26A, 10V | 3V @ 250µA | 18nC @ 5V | ±20V | 1250pF @ 15V | - | 52W (Tc) | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 35A DPAK |
7.758 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 31mOhm @ 21A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | 870pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 8.5A 8-SOIC |
2.016 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.5A (Ta) | 4.5V, 10V | 22mOhm @ 4A, 10V | 1V @ 250µA | 57nC @ 10V | ±20V | 1200pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 55A I-PAK |
3.312 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 19mOhm @ 33A, 10V | 1V @ 250µA | 50nC @ 4.5V | ±16V | 1600pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 400V 5.4A TO220FP |
2.934 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.4A (Tc) | 10V | 550mOhm @ 3.2A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 1370pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 42A I-PAK |
2.106 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Diodes Incorporated |
MOSFET N-CH 60V 115MA SOT-323 |
5.472 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Ta) | 5V, 10V | 7.5Ohm @ 50mA, 5V | 2V @ 250µA | - | ±20V | 50pF @ 25V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
|
|
|
IXYS |
MOSFET N-CH 200V 58A TO-268 |
2.628 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 58A (Tc) | 10V | 40mOhm @ 29A, 10V | 4V @ 4mA | 140nC @ 10V | ±20V | 3600pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
|
|
Vishay Siliconix |
MOSFET P-CH 200V 1.9A DPAK |
5.724 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 1.9A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Semiconductor Diodes Division |
MOSFET N-CH 100V 180A SOT-227 |
7.722 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 6.5mOhm @ 108A, 10V | 4V @ 250µA | 380nC @ 10V | ±20V | 10700pF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 85A D2PAK |
2.016 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 3210pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 41A D2PAK |
5.202 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | ±30V | 2260pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 57A D2PAK |
4.482 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 57A (Tc) | 10V | 23mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 3130pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 100V 5.6A D2PAK |
8.532 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 540mOhm @ 3.4A, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 9.7A D2PAK |
2.790 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 9.7A (Tc) | 10V | 200mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 330pF @ 25V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET P-CH 100V 40A D2PAK |
3.726 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 60mOhm @ 24A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 2700pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET P-CH 55V 31A D2PAK |
4.914 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 60mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1200pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 17A D2PAK |
4.194 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 90mOhm @ 9A, 10V | 4V @ 250µA | 37nC @ 10V | ±20V | 920pF @ 25V | - | 3.8W (Ta), 70W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 100V 14A D2PAK |
2.232 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | ±20V | 670pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 100V 14A D2PAK |
7.290 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | ±20V | 670pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |