Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 507/999
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Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Rohm Semiconductor |
MOSFET N-CH 10V DRIVE LPTS |
7.614 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Ta) | 10V | 500mOhm @ 5.5A, 10V | 4.5V @ 1mA | 30nC @ 10V | ±30V | 1000pF @ 25V | - | 75W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 43A TO-3 |
3.546 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 43A (Tc) | 10V | 40mOhm @ 21.5A, 10V | 4V @ 250µA | 97nC @ 10V | - | 2270pF @ 25V | - | 193W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 80V 120A TO-220-3 |
6.066 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 3.3mOhm @ 100A, 10V | 4.5V @ 250µA | 144nC @ 10V | ±20V | 10965pF @ 40V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 40A TO220FP |
7.686 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 40A (Tc) | 10V | 16mOhm @ 22A, 10V | 4V @ 250µA | 89nC @ 10V | ±20V | 1900pF @ 25V | - | 54W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 12A TO220 |
7.434 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 520mOhm @ 6A, 10V | 4.5V @ 250µA | 37nC @ 10V | ±30V | 1633pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 20V 5.1A 6TSOP |
2.052 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 5.1A (Ta) | 1.8V, 4.5V | 27mOhm @ 5.1A, 4.5V | 450mV @ 1mA (Min) | 20nC @ 4.5V | ±8V | - | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 8A TO263 |
3.942 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 8A (Ta), 130A (Tc) | 10V | 11.7mOhm @ 20A, 10V | 3.8V @ 250µA | 100nC @ 10V | ±20V | 4833pF @ 25V | - | 2.1W (Ta), 500W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 195A TO220AB |
3.978 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 10V | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 8970pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V TO220-3 |
7.884 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 84A (Tc) | 6V, 10V | 2.9mOhm @ 84A, 10V | 3.3V @ 75µA | 66nC @ 10V | ±20V | 5125pF @ 30V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 70A TO263-3 |
5.328 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 4.5V, 10V | 16mOhm @ 50A, 10V | 2V @ 2mA | 240nC @ 10V | ±20V | 4540pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 11A TO220AB |
3.418 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 520mOhm @ 6.6A, 10V | 4V @ 250µA | 52nC @ 10V | ±30V | 1423pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 80V 18.5A TO220 |
7.434 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 18.5A (Ta), 105A (Tc) | 6V, 10V | 3.5mOhm @ 20A, 10V | 3.5V @ 250µA | 178nC @ 10V | ±20V | 7765pF @ 40V | - | 2.1W (Ta), 272.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 362A |
3.672 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 53A (Ta), 362A (Tc) | 4.5V, 10V | 0.7mOhm @ 50A, 10V | 2V @ 280µA | 149nC @ 10V | ±20V | 9400pF @ 20V | - | 3.9W (Ta), 179W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 40V 53A 378A 5DFN |
3.690 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 53A (Ta), 378A (Tc) | 10V | 0.7mOhm @ 50A, 10V | 4V @ 250µA | 128nC @ 10V | ±20V | 8400pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
6.210 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 23.8A (Tc) | 10V | 160mOhm @ 9A, 10V | 4.5V @ 750µA | 44nC @ 10V | ±20V | 2080pF @ 100V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 150V 13A DPAK |
7.902 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRANSISTOR N-CH |
4.158 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO263-3 |
6.102 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 3mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 6000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 40V 46A 300A 5DFN |
5.994 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 46A (Ta), 300A (Tc) | 10V | 0.92mOhm @ 50A, 10V | 3.5V @ 250µA | 86nC @ 10V | ±20V | 6100pF @ 25V | - | 3.9W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 25A TO220F |
7.182 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 25A (Tc) | 10V | 190mOhm @ 12.5A, 10V | 4V @ 250µA | 26.4nC @ 10V | ±30V | 1278pF @ 100V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 103A TO220 |
4.734 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 86A (Tc) | 10V | 3.4mOhm @ 75A, 10V | 4V @ 150µA | 195nC @ 10V | ±20V | 6600pF @ 48V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 73A TO220AB |
8.586 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | ±20V | 3550pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3 |
8.532 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.8mOhm @ 100A, 10V | 4V @ 140µA | 195nC @ 10V | ±20V | 15750pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 40V 53A 378A 5DFN |
3.906 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 53A (Ta), 378A (Tc) | 10V | 0.7mOhm @ 50A, 10V | 4V @ 250µA | 128nC @ 10V | ±20V | 8400pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET P-CH 60V 30A TO-220F |
7.308 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 26mOhm @ 15A, 10V | 4V @ 250µA | 110nC @ 10V | ±25V | 3600pF @ 25V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F-3 (Y-Forming) | TO-220-3 Full Pack, Formed Leads |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO220AB |
2.250 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 2mOhm @ 100A, 10V | 4V @ 150µA | 225nC @ 10V | ±20V | 7330pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 28A DIRECTFETL6 |
3.978 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 28A (Ta), 148A (Tc) | 10V | 2.2mOhm @ 89A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 8075pF @ 50V | - | 3.3W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L6 | DirectFET™ Isometric L6 |
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Rohm Semiconductor |
MOSFET N-CH 500V 9A LPTS |
3.528 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 9A (Ta) | 10V | 720mOhm @ 4.5A, 10V | 4.5V @ 1mA | 21nC @ 10V | ±30V | 650pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Sanken |
MOSFET N-CH 250V 20A TO-263 |
2.178 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 20A (Ta) | 10V | 95mOhm @ 10A, 10V | 4.5V @ 1mA | - | ±30V | 1600pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | TO-263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Sanken |
MOSFET N-CH 250V 20A TO-263 |
8.928 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 20A (Ta) | 10V | 95mOhm @ 10A, 10V | 4.5V @ 1mA | - | ±30V | 1600pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | TO-263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |