Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 445/999
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Teilenummer |
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Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 55A TO251A |
5.580 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 55A (Tc) | 4.5V, 10V | 12mOhm @ 20A, 10V | 2.5V @ 250µA | 50nC @ 10V | ±20V | 2305pF @ 50V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-251A | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 60V 16A 70A 8WDFN |
6.660 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Ta), 70A (Tc) | 4.5V, 10V | 6.8mOhm @ 35A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1400pF @ 25V | - | 3.2W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET N-CHANNEL 60V 14A TO220 |
5.094 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4V, 5V | 100mOhm @ 8.4A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET NCH 30V 22A POWERDI |
2.574 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 145A (Tc) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 3V @ 250µA | 43.7nC @ 10V | +20V, -16V | 2370pF @ 15V | - | 3.2W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 35A POWER56 |
8.802 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 35A (Tc) | 4.5V, 10V | 15mOhm @ 16.5A, 10V | 3V @ 250µA | 44nC @ 10V | ±20V | 1980pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 66A 8PDFN |
4.932 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 66A (Tc) | 4.5V, 10V | 6.1mOhm @ 16A, 10V | 2.5V @ 250µA | 19.3nC @ 10V | ±20V | 1136pF @ 15V | - | 44.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3x3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 30V 8SOFL |
3.708 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 93A (Tc) | 4.5V, 10V | 3.2mOhm @ 30A, 10V | 2.2V @ 250µA | 49.4nC @ 10V | ±20V | 4850pF @ 15V | - | 930mW (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 8SOFL |
3.294 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 93A (Tc) | 4.5V, 10V | 3.2mOhm @ 30A, 10V | 2.2V @ 250µA | 49.4nC @ 10V | ±20V | 4850pF @ 15V | - | 930mW (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 400V 0.21A SOT-223 |
8.082 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 400V | 210mA (Ta) | 0V, 10V | 18Ohm @ 210mA, 10V | 1V @ 94µA | 6.8nC @ 5V | ±20V | 135pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Rohm Semiconductor |
MOSFET N-CH 45V 7A SOP8 |
6.570 |
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- | N-Channel | MOSFET (Metal Oxide) | 45V | 7A (Ta) | 4V, 10V | 25mOhm @ 7A, 10V | 2.5V @ 1mA | 16.8nC @ 5V | 20V | 1000pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 60V 16A 8WDFN |
7.344 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Ta), 70A (Tc) | 4.5V, 10V | 6.5mOhm @ 35A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1400pF @ 25V | - | 3.2W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
T6 60V NCH LL IN U8FL |
7.722 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
2.178 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 40V 24A 102A 5DFN |
5.472 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 24A (Ta), 102A (Tc) | 10V | 3.3mOhm @ 50A, 10V | 3.5V @ 65µA | 23nC @ 10V | ±20V | 1600pF @ 25V | - | 3.6W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 80V 50A POWER56 |
6.192 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 50A (Tc) | 10V | 13.4mOhm @ 50A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | 1440pF @ 40V | - | 75W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 8A DPAK-3 |
8.694 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 6V, 10V | 104mOhm @ 4A, 10V | 3V @ 1mA | 19nC @ 10V | +10V, -20V | 890pF @ 10V | - | 27W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 10A DPAK-3 |
5.436 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 40V | 10A (Ta) | 6V, 10V | 28mOhm @ 5A, 10V | 3V @ 1mA | 10nC @ 10V | ±20V | 410pF @ 10V | - | 25W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 8A DPAK-3 |
4.122 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 6V, 10V | 54mOhm @ 4A, 10V | 3V @ 1mA | 10nC @ 10V | ±20V | 400pF @ 10V | - | 25W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 4A TO251A |
2.376 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 900mOhm @ 2A, 10V | 4.1V @ 250µA | 6nC @ 10V | ±30V | 263pF @ 100V | - | 56.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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Rohm Semiconductor |
MOSFET N-CH 60V 8A CPT3 |
7.038 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 4V, 10V | 80mOhm @ 8A, 10V | 2.5V @ 1mA | 9.4nC @ 10V | ±20V | 380pF @ 10V | - | 15W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 30V 12.5A 8SOIC |
4.086 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 12.5A (Ta) | 4V, 10V | 12mOhm @ 12.5A, 10V | 2.5V @ 1mA | 12.7nC @ 5V | ±20V | 1000pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET P-CH 30V 24A 8HWSON |
6.786 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 24A (Tc) | 4.5V, 10V | 7.8mOhm @ 24A, 5V | - | 74nC @ 10V | ±20V | 2800pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerWDFN |
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Nexperia |
MOSFET N-CH 80V 100A LFPAK56 |
6.858 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Ta) | 5V, 10V | 8mOhm @ 25A, 10V | 2.1V @ 1mA | 104nC @ 10V | ±20V | 8167pF @ 25V | - | 238W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI333 |
8.928 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI333 |
6.804 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 30V 8-MLP |
5.256 |
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PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 16.9A (Ta), 20A (Tc) | 4.5V, 10V | 5.7mOhm @ 16.9A, 10V | 3V @ 250µA | 57nC @ 10V | ±20V | 3890pF @ 15V | - | 2.3W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 80V 50A POWER56 |
4.320 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 50A (Tc) | 10V | 13.4mOhm @ 50A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | 1440pF @ 40V | - | 75W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 90A |
4.734 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 6V, 10V | 4.8mOhm @ 66A, 10V | 3.7V @ 100µA | 130nC @ 10V | ±20V | 4360pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CHANNEL_100+ |
2.484 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET P-CH 240V 0.2A TO92-3 |
3.258 |
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- | P-Channel | MOSFET (Metal Oxide) | 240V | 200mA (Ta) | 3.5V, 10V | 9Ohm @ 200mA, 10V | 2V @ 1mA | - | ±40V | 200pF @ 25V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |