Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 307/999
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Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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STMicroelectronics |
MOSFET N-CH 600V 21A TO247 |
8.460 |
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FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 175mOhm @ 10.5A, 10V | 5V @ 250µA | 54.6nC @ 10V | ±25V | 1817pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 150V 100A TO-220 |
7.488 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 100A (Tc) | 10V | 11.5mOhm @ 50A, 10V | 4.5V @ 250µA | 74nC @ 10V | ±20V | 3970pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH 150V 150A TO-220 |
8.262 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 150A (Tc) | 10V | 7.2mOhm @ 75A, 10V | 4.5V @ 250µA | 105nC @ 10V | ±20V | 5500pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
200V/90A ULTRA JUNCTION X3-CLASS |
5.076 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 90A (Tc) | 10V | 12.8mOhm @ 45A, 10V | 4.5V @ 1.5mA | 78nC @ 10V | ±20V | 5420pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 150V 130A TO-263 |
6.192 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 130A (Tc) | 10V | 8mOhm @ 65A, 10V | 4.5V @ 250µA | 87nC @ 10V | ±20V | 4770pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 150V 130A TO-263-7L |
6.804 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 130A (Tc) | 10V | 8mOhm @ 65A, 10V | 4.5V @ 250µA | 87nC @ 10V | ±20V | 4770pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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IXYS |
200V/140A ULTRA JUNCTION X3-CLAS |
6.132 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 140A (Tc) | 10V | 9.6mOhm @ 70A, 10V | 4.5V @ 4mA | 127nC @ 10V | ±20V | 7660pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Vishay Siliconix |
MOSFET N-CHAN 600V |
6.930 |
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EL | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 65mOhm @ 23.5A, 10V | 4V @ 250µA | 222nC @ 10V | ±30V | 4600pF @ 100V | - | 379W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
200V/140A ULTRA JUNCTION X3-CLAS |
8.190 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 140A (Tc) | 10V | 9.6mOhm @ 70A, 10V | 4.5V @ 4mA | 127nC @ 10V | ±20V | 7660pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 150V 150A TO-263-7 |
6.408 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 150A (Tc) | 10V | 6.9mOhm @ 75A, 10V | 4.5V @ 250µA | 105nC @ 10V | ±20V | 5500pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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IXYS |
MOSFET N-CH 150V 150A TO-263 |
7.632 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 150A (Tc) | 10V | 6.9mOhm @ 75A, 10V | 4.5V @ 250µA | 105nC @ 10V | ±20V | 5500pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
200V/140A ULTRA JUNCTION X3-CLAS |
6.066 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 140A (Tc) | 10V | 9.6mOhm @ 70A, 10V | 4.5V @ 4mA | 127nC @ 10V | ±20V | 7660pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268HV | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Infineon Technologies |
MOSFET TO247-4 |
8.208 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 76A (Tc) | 10V | 37mOhm @ 29.5A, 10V | 4V @ 1.48mA | 121nC @ 10V | ±20V | 5243pF @ 400V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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IXYS |
200V/180A ULTRA JUNCTION X3-CLAS |
2.100 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 180A (Tc) | 10V | 7.5mOhm @ 90A, 10V | 4.5V @ 4mA | 154nC @ 10V | ±20V | 10300pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Microsemi |
GEN2 SIC MOSFET 700V 90MOHM TO-2 |
7.830 |
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- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 700V | - | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi |
GEN2 SIC MOSFET 700V 90MOHM D3PA |
6.084 |
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- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 700V | - | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Vishay Siliconix |
MOSFET N-CHAN 600V TO-247AC |
6.024 |
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EL | N-Channel | MOSFET (Metal Oxide) | 600V | 69A (Tc) | 10V | 42mOhm @ 36.5A, 10V | 4V @ 250µA | 342nC @ 10V | ±30V | 6709pF @ 100V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
MOSFET 1KV 26A ULTRA JCT TO247 |
5.256 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 26A (Tc) | 10V | 320mOhm @ 13A, 10V | 6V @ 4mA | 113nC @ 10V | ±30V | 3290pF @ 25V | - | 860W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET 1000V 26A ULTRA JUNCTION |
8.442 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 26A (Ta) | 10V | 320mOhm @ 500mA, 10V | 1V @ 4mA | 113nC @ 10V | ±30V | 3290pF @ 25V | - | 860mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268HV (IXFT) | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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STMicroelectronics |
MOSFET N CH 600V 45A TO-247 |
6.144 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 45A (Tc) | 10V | 60mOhm @ 22.5A, 10V | 4V @ 250µA | 150nC @ 10V | ±25V | 4800pF @ 50V | - | 300W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
200V/220A ULTRA JUNCTION X3-CLAS |
6.246 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 220A (Tc) | 10V | 6.2mOhm @ 110A, 10V | 4.5V @ 4mA | 204nC @ 10V | ±20V | 13600pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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STMicroelectronics |
MOSFET N-CH 600V 65A TO-247 |
6.396 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 65A (Tc) | 10V | 49mOhm @ 32.5A, 10V | 4V @ 250µA | 174nC @ 10V | ±25V | 5800pF @ 100V | - | 450W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 150V 240A TO-268HV |
7.236 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 240A (Tc) | 10V | 4.4mOhm @ 120A, 10V | 4.5V @ 250µA | 195nC @ 10V | ±20V | 8900pF @ 25V | - | 940W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-268HV | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET 1KV 32A ULTRA JCT TO-247 |
5.436 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 32A (Tc) | 10V | 220mOhm @ 16A, 10V | 6V @ 4mA | 130nC @ 10V | ±30V | 4075pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET 1KV 32A ULTRA JCT TO-264 |
7.650 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 32A (Tc) | 10V | 220mOhm @ 16A, 10V | 6V @ 4mA | 130nC @ 10V | ±30V | 4075pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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IXYS |
MOSFET 1KV 32A ULTRA JCT TO268HV |
6.318 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 32A (Tc) | 10V | 220mOhm @ 16A, 10V | 6V @ 4mA | 130nC @ 10V | ±30V | 4075pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268HV (IXFT) | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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STMicroelectronics |
MOSFET N CH 650V 42A TO247-4 |
6.876 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 42A (Tc) | 10V | 63mOhm @ 21A, 10V | 5V @ 250µA | 98nC @ 10V | ±25V | 4200pF @ 100V | - | 250W (Tc) | 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Infineon Technologies |
COOLSIC MOSFETS 1200V |
6.966 |
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CoolSiC™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1.2kV | 52A (Tc) | 15V | 59mOhm @ 20A, 15V | 5.7V @ 10mA | 52nC @ 15V | +20V, -10V | 1.9nF @ 800V | - | 228W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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IXYS |
MOSFET 1KV 52A ULTRA JCT PLUS247 |
7.218 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 52A (Tc) | 10V | 125mOhm @ 26A, 10V | 6V @ 4mA | 245nC @ 10V | ±30V | 6725pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™ | TO-247-3 |
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IXYS |
MOSFET 1KV 52A ULTRA JCT TO-264 |
8.334 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 52A (Tc) | 10V | 125mOhm @ 26A, 10V | 6V @ 4mA | 245nC @ 10V | ±30V | 6725pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |