Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 86/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE GEN PURP 650V 40A TO220-2 |
13.722 |
|
- | Standard | 650V | 40A | 2.3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 40µA @ 650V | - | Through Hole | TO-220-2 | TO-220-2 | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 1.2KV 2A TO220AC |
27.240 |
|
ECOPACK®2 | Silicon Carbide Schottky | 1200V | 2A | 1.5V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 12µA @ 1200V | 190pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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|
IXYS |
DIODE GEN PURP 1.6KV 30A TO263 |
18.918 |
|
- | Standard | 1600V | 30A | 1.29V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 1600V | 10pF @ 400V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
13.638 |
|
FRED Pt® | Standard | 600V | 30A | 2.65V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 26ns | 30µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -65°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 600V 6A TO220AC |
17.376 |
|
- | Silicon Carbide Schottky | 600V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 75µA @ 600V | 375pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
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|
STMicroelectronics |
DIODE GEN PURP 200V 15A TO220AC |
13.836 |
|
- | Standard | 200V | 15A | 1.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 36ns | 10µA @ 200V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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IXYS |
DIODE GEN PURP 1.2KV 30A TO220AC |
16.464 |
|
HiPerFRED™ | Standard | 1200V | 30A | 2.75V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 250µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 15A TO247AC |
23.856 |
|
HEXFRED® | Standard | 600V | 15A | 1.7V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 6A TO220-2-1 |
20.664 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 110µA @ 650V | 190pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 60V 30A TO220AB |
25.416 |
|
- | Schottky | 60V | 30A | 590mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 165µA @ 60V | - | Through Hole | TO-220-3 | TO-220AB | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A TO252AA |
22.032 |
|
- | Standard | 1200V | 8A | 1.1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 75V 200MA DO213AA |
15.996 |
|
Military, MIL-PRF-19500/116 | Standard | 75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 600V 30A TO247 |
84.054 |
|
- | Standard | 600V | 30A | 1.8V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 60A TO247 |
35.970 |
|
- | Standard | 600V | 60A | 1.7V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 100µA @ 600V | - | Through Hole | TO-247-3 | TO-247 | -65°C ~ 150°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 650V 2A TO252-2 |
14.886 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 295pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 650V 6A TO220-2 |
20.712 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 19A (DC) | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 294pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 6A TO220FM |
34.632 |
|
- | Silicon Carbide Schottky | 650V | 6A | 1.55V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 600V | 219pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 6A TO220AC |
15.756 |
|
- | Silicon Carbide Schottky | 650V | 6A (DC) | 1.55V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 600V | 219pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Cree/Wolfspeed |
DIODE SCHOTTKY 650V 13A TO220-2 |
5.178 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 13A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 295pF @ 0V, 1MHz | Through Hole | TO-220-2 Isolated Tab | TO-220-2 Isolated Tab | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.2KV 45A TO247AD |
28.724 |
|
- | Standard | 1200V | 45A | 1.28V @ 45A | Standard Recovery >500ns, > 200mA (Io) | - | 20µA @ 1200V | 18pF @ 400V, 1MHz | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 1.2KV 40A TO247 |
12.486 |
|
- | Standard | 1200V | 40A | 3.3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 350ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.6KV 45A TO247AD |
2.411 |
|
- | Standard | 1600V | 45A | 1.28V @ 45A | Standard Recovery >500ns, > 200mA (Io) | - | 20µA @ 1600V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 175°C |
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IXYS |
DIODE SCHOTTKY 45V 60A TO247AD |
14.376 |
|
- | Schottky | 45V | 60A | 600mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 45V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 20A TO220-2 |
7.896 |
|
- | Silicon Carbide Schottky | 650V | 20A (DC) | 1.35V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 27µA @ 420V | 401pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Semtech |
DIODE GEN PURP 150V 6A AXIAL |
13.380 |
|
- | Standard | 150V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 60pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 1.2KV 75A TO247 |
6.984 |
|
- | Standard | 1200V | 75A | 3.2V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 8A TO220-2-1 |
9.684 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 650V | 250pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 60A TO247 |
10.752 |
|
- | Standard | 400V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 100µA @ 400V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 150°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 8A TO220-2 |
16.404 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 24A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 441pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 150A TO247-3 |
17.004 |
|
- | Standard | 650V | 150A (DC) | 1.7V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 108ns | 40µA @ 650V | - | Through Hole | TO-247-3 | PG-TO247-3 | -40°C ~ 175°C |