Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 85/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
DIODE SIC SCHKY 1.2KV 2A TO252 |
25.458 |
|
- | Silicon Carbide Schottky | 1200V | 5A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 131pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A TO220AC |
20.730 |
|
TMBS® | Schottky | 100V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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IXYS |
DIODE GEN PURP 1KV 12A TO220AC |
14.322 |
|
- | Standard | 1000V | 12A | 2.7V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 250µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 30A TO220AB |
115.032 |
|
TMBS® | Schottky | 100V | 30A | 910mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | -40°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 400V 30A D2PAK |
13.500 |
|
- | Standard | 400V | 30A | 1.45V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 400V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 800V 30A TO220AC |
15.492 |
|
- | Standard | 800V | 30A | 1.29V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 800V | 10pF @ 400V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
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STMicroelectronics |
DIODE GEN PURP 1.2KV 15A D2PAK |
22.740 |
|
Automotive, AEC-Q101 | Standard | 1200V | 15A | 1.9V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 105ns | 15µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 60V 30A D2PAK |
22.818 |
|
- | Schottky | 60V | 30A | 590mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 165µA @ 60V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO220FP |
27.996 |
|
FRED Pt® | Standard | 600V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 30A TO220AC |
23.148 |
|
- | Standard | 600V | 30A | 2.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 250µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2L | -65°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 600V 8A D2PAK |
13.290 |
|
- | Silicon Carbide Schottky | 600V | 8A | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 450pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 15V 20A TO220AC |
20.616 |
|
- | Schottky | 15V | 20A | 410mV @ 19A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6mA @ 15V | - | Through Hole | TO-220-2 | TO-220AC | 125°C (Max) |
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ON Semiconductor |
DIODE SCHOTTKY 30V 40A D2PAK |
26.004 |
|
SWITCHMODE™ | Schottky | 30V | 40A | 550mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350µA @ 30V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 40A ITO220AC |
16.134 |
|
TMBS® | Schottky | 45V | 40A (DC) | 670mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 45V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | 200°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 5.5A TO252AA |
68.604 |
|
Automotive, AEC-Q101 | Schottky | 40V | 5.5A | 510mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 40V | 405pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 600V 30A D2PAK |
5.154 |
|
- | Standard | 600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 5.5A TO252AA |
119.016 |
|
Automotive, AEC-Q101 | Schottky | 60V | 5.5A | 570mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 60V | 360pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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STMicroelectronics |
DIODE SCHOTTKY 100V 30A TO220AB |
25.458 |
|
- | Schottky | 100V | 30A | 800mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 175µA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | 150°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 600V 15A TO247 |
13.194 |
|
Stealth™ | Standard | 600V | 15A | 2.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 28A TO220-2 |
20.532 |
|
- | Standard | 650V | 28A (DC) | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 42ns | 40µA @ 650V | - | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -40°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 4A TO220-F2 |
40.842 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 251pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220-F2 | -55°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 4A TO220-2 |
24.582 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 13.5A (DC) | 1.8V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 251pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 30A TO220AC |
23.412 |
|
Stealth™ | Standard | 600V | 30A | 2.4V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 650V 4A TO252-2 |
35.094 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 13.5A (DC) | 1.8V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 251pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 8A TO220FP |
16.890 |
|
- | Standard | 600V | 8A | 2.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FPAC | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 12A TO220FP |
20.748 |
|
- | Standard | 600V | 12A | 2.9V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 45µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FPAC | 175°C (Max) |
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Power Integrations |
DIODE GEN PURP 600V 12A TO220AC |
21.096 |
|
Qspeed™ | Standard | 600V | 12A | 3.1V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 11.6ns | 250µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO220-2 |
22.956 |
|
- | Silicon Carbide Schottky | 650V | 12A (DC) | 1.35V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 14µA @ 420V | 205pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 4A TO220-2-1 |
57.618 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 4A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 650V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 30A D2PAK |
15.934 |
|
Automotive, AEC-Q101 | Standard | 600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | -40°C ~ 175°C |