Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 708/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
FAST RECOVERY RECTIFIER |
8.424 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
FAST RECOVERY RECTIFIER |
3.780 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
FAST RECOVERY RECTIFIER |
3.348 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
FAST RECOVERY RECTIFIER |
7.200 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
FAST RECOVERY RECTIFIER |
3.114 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
FAST RECOVERY RECTIFIER |
5.652 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
FAST RECOVERY RECTIFIER |
7.794 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 85A D-55 |
3.580 |
|
- | Standard | 400V | 85A | - | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 20mA @ 400V | - | Chassis Mount | D-55 T-Module | D-55 | - |
|
|
|
Microsemi |
SCHOTTKY BARRIER RECTIFIER |
225 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 75V 300MA UB2 |
4.374 |
|
Military, MIL-PRF-19500/578 | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | - | Surface Mount | 2-SMD, No Lead | UB2 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 300MA UB2 |
7.830 |
|
Military, MIL-PRF-19500/578 | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | - | Surface Mount | 2-SMD, No Lead | UB2 | -65°C ~ 175°C |
|
|
|
Microsemi |
RECTIFIER |
7.938 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 85A D-55 |
4.500 |
|
- | Standard | 200V | 85A | - | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 20mA @ 200V | - | Chassis Mount | D-55 T-Module | D-55 | - |
|
|
|
Microsemi |
RECTIFIER |
6.318 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
RECTIFIER |
6.066 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 85A D-55 |
5.904 |
|
- | Standard | 600V | 85A | - | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 20mA @ 600V | - | Chassis Mount | D-55 T-Module | D-55 | - |
|
|
|
Microsemi |
DIODE GEN PURP 400V 12A DO203AA |
3.418 |
|
Military, MIL-PRF-19500/260 | Standard, Reverse Polarity | 400V | 12A | 1.35V @ 38A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 150°C |
|
|
|
Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
3.906 |
|
- | Silicon Carbide Schottky | 1700V | 35A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1700V | 1400pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 12A DO203AA |
4.248 |
|
Military, MIL-PRF-19500/260 | Standard | 600V | 12A | 1.35V @ 38A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 150°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 40V 120A D-67 |
5.670 |
|
- | Schottky | 40V | 120A | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | - | D-67 | - | - |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 100V 120A D-67 |
3.472 |
|
- | Schottky | 100V | 120A | 840mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 100V 120A D-67 |
2.574 |
|
- | Schottky, Reverse Polarity | 100V | 120A | 840mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 20V 120A D-67 |
4.014 |
|
- | Schottky | 20V | 120A | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 20V 120A D-67 |
7.902 |
|
- | Schottky, Reverse Polarity | 20V | 120A | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 30V 120A D-67 |
6.120 |
|
- | Schottky | 30V | 120A | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 30V 120A D-67 |
6.588 |
|
- | Schottky, Reverse Polarity | 30V | 120A | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 35V 120A D-67 |
3.024 |
|
- | Schottky | 35V | 120A | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 35V 120A D-67 |
5.958 |
|
- | Schottky, Reverse Polarity | 35V | 120A | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 120A D-67 |
3.636 |
|
- | Schottky | 45V | 120A | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 20V | - | Chassis Mount | D-67 | D-67 | - |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 120A D-67 |
4.806 |
|
- | Schottky, Reverse Polarity | 45V | 120A | 700mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | - | Chassis Mount | D-67 HALF-PAK | D-67 | -55°C ~ 150°C |