Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 560/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 150V 4A SOD64 |
4.248 |
|
- | Avalanche | 150V | 4A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 3A SOD64 |
5.076 |
|
- | Avalanche | 400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 1µA @ 400V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A SOD64 |
7.146 |
|
- | Standard | 400V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A SOD64 |
6.714 |
|
- | Standard | 400V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A TO277A |
4.680 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 45V | 10A (DC) | 570mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 45V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 10A SMPC4.0 |
8.622 |
|
- | Schottky | 45V | 10A | 460mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 45V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 60V 25A 8PDFN |
8.046 |
|
Automotive, AEC-Q101 | Standard | 60V | 25A | 630mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 5.5A TO277A |
7.632 |
|
eSMP®, TMBS® | Schottky | 50V | 5.5A | 590mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 50V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 5.5A TO277A |
3.562 |
|
eSMP®, TMBS® | Schottky | 50V | 5.5A | 590mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 50V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 120V 5A TO220AB |
5.454 |
|
- | Schottky | 120V | 5A | 790mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 120V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 16A TO220AB |
8.136 |
|
- | Standard | 200V | 16A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SBR 45V 20A TO252 |
3.096 |
|
SBR® | Super Barrier | 45V | 20A | 590mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 16A TO220AC |
3.168 |
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- | Schottky | 150V | 16A | 950mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 12A TO277A |
5.580 |
|
Automotive, AEC-Q101 | Schottky | 20V | 12A | 560mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1000µA @ 20V | 930pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 12A TO277A |
5.652 |
|
Automotive, AEC-Q101 | Schottky | 30V | 12A | 560mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1000µA @ 20V | 930pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 10A 80V TO-263AB |
5.706 |
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- | Schottky | 80V | 10A | 810mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 80V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A TO220AC |
7.938 |
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TMBS® | Schottky | 45V | 10A (DC) | 680mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | 200°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 500V 3A SOD64 |
8.568 |
|
- | Standard | 500V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 500V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 500V 3A SOD64 |
8.496 |
|
- | Standard | 500V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 500V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Nexperia |
DIODE SCHOTTKY 45V 15A CFP15 |
4.014 |
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- | Schottky | 45V | 15A | 580mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 100µA @ 45V | 2200pF @ 1V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | CFP15 | 150°C (Max) |
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Diodes Incorporated |
SBR DIODE TO252 |
3.454 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 10A 80V ITO-220AB |
8.154 |
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TMBS® | Schottky | 80V | 10A | 810mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 80V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 10A 80V TO-220AB |
8.442 |
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- | Schottky | 80V | 10A | 810mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 80V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 20V 2A SMB |
4.230 |
|
- | Schottky | 20V | 2A | 400mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 386pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 5.5A TO277A |
4.428 |
|
eSMP®, TMBS® | Schottky | 60V | 5.5A | 590mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 5.5A TO277A |
5.454 |
|
eSMP®, TMBS® | Schottky | 60V | 5.5A | 630mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 35V 16A TO220AC |
4.842 |
|
Automotive, AEC-Q101 | Schottky | 35V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 35V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 16A TO220AC |
6.120 |
|
Automotive, AEC-Q101 | Schottky | 45V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 16A TO220AC |
2.592 |
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Automotive, AEC-Q101 | Schottky | 50V | 16A | 750mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 16A TO220AC |
7.506 |
|
Automotive, AEC-Q101 | Schottky | 60V | 16A | 750mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |