Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 557/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Diodes Incorporated |
DIODE SBR 45V 10A POWERDI 5 |
2.610 |
|
Automotive, AEC-Q101, SBR® | Super Barrier | 45V | 10A | 550mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 450µA @ 45V | 500pF @ 4V, 1MHz | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 16A TO220AC |
8.460 |
|
- | Schottky | 100V | 16A | 850mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SBR 100V 15A POWERDI5 |
4.788 |
|
TrenchSBR | Super Barrier | 100V | 15A | 700mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A ITO220AB |
8.946 |
|
- | Standard | 600V | 10A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 15A TO277A |
8.820 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 80V | 15A | 660mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.2mA @ 80V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 8A TO220AC |
5.022 |
|
- | Standard | 50V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 8A TO220AC |
5.130 |
|
- | Standard | 100V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A TO220AC |
5.904 |
|
- | Standard | 200V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO220AC |
8.820 |
|
- | Standard | 600V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A TO220AC |
6.264 |
|
- | Standard | 1000V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A TO262AA |
3.456 |
|
FRED Pt® | Standard | 200V | 8A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262AA | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A ITO220AC |
8.550 |
|
- | Standard | 600V | 8A | 2.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 30µA @ 600V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Bourns |
DIODE GEN PURP 400V 1A 1408 |
2.124 |
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- | Standard | 400V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 1µA @ 400V | 12pF @ 4V, 1MHz | Surface Mount | Chip, Concave Terminals | 1408 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 6A TO-220 |
8.334 |
|
- | Schottky | 35V | 6A | 730mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 35V | 400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 6A TO220AC |
7.326 |
|
- | Schottky | 40V | 6A | 730mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 40V | 400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 6A TO-220 |
8.298 |
|
- | Schottky | 45V | 6A | 730mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 45V | 400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 7.5A TO220AC |
2.646 |
|
- | Schottky | 35V | 7.5A | 840mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 35V | 400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 7.5A TO220AC |
4.842 |
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- | Schottky | 45V | 7.5A | 840mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | 400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 8A TO220AC |
7.272 |
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- | Standard | 200V | 8A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 8A TO220AC |
3.816 |
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- | Standard | 400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A DPAK |
3.024 |
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- | Schottky | 45V | 10A | 630mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | 760pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A DPAK |
8.604 |
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- | Schottky | 45V | 10A | 630mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | 760pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A DPAK |
6.480 |
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- | Schottky | 45V | 10A | 630mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | 760pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A DPAK |
3.906 |
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- | Schottky | 45V | 10A | 630mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | 760pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -40°C ~ 175°C |
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ON Semiconductor |
10A 200V ULTRA FAST RECTIFIER |
5.310 |
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* | - | - | - | - | - | - | - | - | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | - |
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ON Semiconductor |
10A 400V ULTRA FAST RECTIFIER |
7.506 |
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* | - | - | - | - | - | - | - | - | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | - |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.4A TO277A |
5.058 |
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eSMP® | Avalanche | 800V | 1.4A (DC) | 2.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.4A TO277 |
6.894 |
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eSMP® | Avalanche | 1000V | 1.4A (DC) | 2.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.4A TO277A |
3.240 |
|
eSMP® | Avalanche | 800V | 1.4A (DC) | 2.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 20V 3A DO214AB |
4.554 |
|
- | Schottky | 20V | 3A | 460mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 20V | - | Surface Mount | DO-214AB | DO-214AB | -55°C ~ 150°C |