Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 504/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 5A DO214AA |
5.850 |
|
Automotive, AEC-Q101 | Schottky | 100V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 150V 5A DO27 |
6.876 |
|
- | Schottky | 150V | 5A | 920mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8µA @ 150V | - | Through Hole | DO-201AA, DO-27, Axial | DO-27 | 175°C (Max) |
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Comchip Technology |
DIODE SCHOTTKY 60V 5A DO214AA |
2.178 |
|
- | Schottky | 60V | 5A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 210pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
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Comchip Technology |
DIODE SCHOTTKY 40V 2A MINISMA |
5.832 |
|
- | Schottky | 40V | 2A | 400mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 160pF @ 4V, 1MHz | Surface Mount | SOD-123T | Mini SMA/SOD-123 | -55°C ~ 125°C |
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Comchip Technology |
DIODE SCHOTTKY 40V 2A MINISMA |
7.560 |
|
- | Schottky | 40V | 2A (DC) | 380mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 160pF @ 4V, 1MHz | Surface Mount | SOD-123T | Mini SMA/SOD-123 | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 6A R-6 |
3.780 |
|
Automotive, AEC-Q101 | Standard | 400V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 6A R-6 |
3.780 |
|
Automotive, AEC-Q101 | Standard | 600V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 6A R-6 |
5.472 |
|
Automotive, AEC-Q101 | Standard | 800V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 6A R-6 |
2.052 |
|
Automotive, AEC-Q101 | Standard | 400V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 40V 5A DO214AA |
6.552 |
|
- | Schottky | 40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 300pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -50°C ~ 125°C |
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Comchip Technology |
DIODE SCHOTTKY 40V 5A DO214AA |
5.400 |
|
- | Schottky | 40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 300pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -50°C ~ 125°C |
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Comchip Technology |
DIODE SCHOTTKY 60V 5A DO214AA |
3.762 |
|
- | Schottky | 60V | 5A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 210pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 3A DO214AB |
8.802 |
|
- | Standard | 300V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
3.456 |
|
- | Standard | 400V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 3A DO214AB |
8.712 |
|
- | Standard | 300V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
3.672 |
|
- | Standard | 400V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 5A SMPC4.0 |
6.606 |
|
- | Schottky | 100V | 5A | 660mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 120V 5A SMPC4.0 |
3.852 |
|
- | Schottky | 120V | 5A | 740mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 5A SMPC4.0 |
3.528 |
|
- | Schottky | 150V | 5A | 840mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 4A DO201AD |
3.042 |
|
- | Standard | 150V | 4A | 1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A DO201AD |
4.554 |
|
- | Standard | 200V | 4A | 1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 40V 3A DO214AB |
2.952 |
|
- | Schottky | 40V | 3A | 450mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 250pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -50°C ~ 150°C |
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Diodes Incorporated |
DIODE SBR 45V 10A POWERDI5 |
5.130 |
|
SBR® | Super Barrier | 45V | 10A | 550mV @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 380µA @ 45V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO201AD |
8.424 |
|
Automotive, AEC-Q101 | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Torex Semiconductor Ltd |
SCHOTTKY BARRIER DIODE |
3.400 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Torex Semiconductor Ltd |
FAST RECOVERY DIODE |
6.516 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Torex Semiconductor Ltd |
FAST RECOVERY DIODE |
3.294 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Torex Semiconductor Ltd |
FAST RECOVERY DIODE |
2.178 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2KV 250MA DO204 |
2.898 |
|
Automotive, AEC-Q101 | Standard | 2000V | 250mA | 3V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 2000V | 3pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2.5KV 250MA DO204 |
5.202 |
|
Automotive, AEC-Q101 | Standard | 2500V | 250mA | 3V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 2500V | 3pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |