Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 501/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Sanken |
DIODE SCHOTTKY 40V 1A AXIAL |
7.416 |
|
- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 40V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
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Sanken |
DIODE SCHOTTKY 60V 700MA AXIAL |
8.370 |
|
- | Schottky | 60V | 700mA | 620mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE SCHOTTKY 60V 700MA AXIAL |
6.714 |
|
- | Schottky | 60V | 700mA | 620mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE SCHOTTKY 90V 700MA AXIAL |
2.970 |
|
- | Schottky | 90V | 700mA | 810mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 90V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE SCHOTTKY 90V 700MA AXIAL |
2.574 |
|
- | Schottky | 90V | 700mA | 810mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 90V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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|
Sanken |
DIODE GEN PURP 200V 1A AXIAL |
2.196 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 1KV 500MA AXIAL |
3.906 |
|
- | Standard | 1000V | 500mA | 3.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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Sanken |
DIODE GEN PURP 1KV 500MA AXIAL |
7.992 |
|
- | Standard | 1000V | 500mA | 3.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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Sanken |
DIODE GEN PURP 600V 1.2A AXIAL |
8.748 |
|
- | Standard | 600V | 1.2A | 920mV @ 1.2A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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|
Sanken |
DIODE GEN PURP 800V 1.2A AXIAL |
7.956 |
|
- | Standard | 800V | 1.2A | 920mV @ 1.2A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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|
Sanken |
DIODE GEN PURP 400V 1.2A AXIAL |
2.736 |
|
- | Standard | 400V | 1.2A | 920mV @ 1.2A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 1KV 200MA AXIAL |
6.372 |
|
- | Standard | 1000V | 200mA | 4V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 200ns | 5µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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Sanken |
DIODE GEN PURP 1KV 200MA AXIAL |
3.816 |
|
- | Standard | 1000V | 200mA | 4V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 200ns | 5µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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Sanken |
DIODE SCHOTTKY 40V 2A SJP |
5.958 |
|
- | Schottky | 40V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
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Sanken |
DIODE SCHOTTKY 60V 2A SJP |
8.478 |
|
- | Schottky | 60V | 2A | 690mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
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Sanken |
DIODE SCHOTTKY 90V 2A SJP |
8.532 |
|
- | Schottky | 90V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 90V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 200V 1A SJP |
7.650 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 25µA @ 200V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 3A TO277A |
8.730 |
|
Automotive, AEC-Q101 | Schottky | 50V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 50V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SBR 45V 10A POWERDI5 |
5.418 |
|
- | Super Barrier | 45V | 10A | 470mV @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 280µA @ 45V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE RECT SBR 45V 5A POWERDI5 |
5.526 |
|
SBR® | Super Barrier | 45V | 5A | 600mV @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 280µA @ 45V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE RECT SBR 45V 5A POWERDI5 |
4.752 |
|
SBR® | Super Barrier | 45V | 5A | 600mV @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 280µA @ 45V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 3A 150V DO-214AB |
4.050 |
|
- | Schottky | 150V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 3A 200V DO-214AB |
6.462 |
|
- | Schottky | 200V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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|
Bourns |
DIO RECT VRRM 400V 3A SMC |
2.268 |
|
- | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 19pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -65°C ~ 175°C |
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Bourns |
DIO RECT VRRM 600V 3A SMC |
2.682 |
|
- | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 19pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -65°C ~ 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 20V 5A PMDS |
5.184 |
|
- | Schottky | 20V | 5A | 390mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AC, SMA | PMDS | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.5A SOD57 |
4.176 |
|
- | Avalanche | 400V | 1.5A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 400V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.4A SOD57 |
3.492 |
|
- | Avalanche | 200V | 1.4A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 1.9A SOD57 |
3.490 |
|
- | Avalanche | 50V | 1.9A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.25A SOD57 |
5.184 |
|
- | Avalanche | 200V | 1.25A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |