Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 484/1165
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A SMB |
4.428 |
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Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 3A | 1.35V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 3µA @ 600V | - | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 60V 5A 5DFN |
8.532 |
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- | Schottky | 60V | 5A | 780mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 60V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 120V 10A 5DFN |
6.426 |
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- | Schottky | 120V | 10A | 820mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 120V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 3A 6CPH |
8.010 |
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- | Schottky | 30V | 3A | 420mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 1.4mA @ 15V | 90pF @ 10V, 1MHz | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-CPH | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 3A DO214AC |
7.002 |
|
Automotive, AEC-Q101 | Schottky | 30V | 3A | 450mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 2A DO214AC |
5.670 |
|
Automotive, AEC-Q101 | Avalanche | 50V | 2A | 1.1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 2A DO214AC |
8.586 |
|
Automotive, AEC-Q101 | Avalanche | 100V | 2A | 1.1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A DO214AC |
6.390 |
|
Automotive, AEC-Q101 | Avalanche | 200V | 2A | 1.1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 3A DO201AD |
2.718 |
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- | Schottky | 30V | 3A | 490mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 3A DO201AD |
6.408 |
|
- | Schottky | 40V | 3A | 490mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 125°C |
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SMC Diode Solutions |
PIV 100V IO 3A CHIP SIZE 66MIL S |
3.258 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
DIODE GEN PURP 300V 5A DPAK |
7.470 |
|
Automotive, AEC-Q101 | Standard | 300V | 5A | 1.05V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 175°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 1A SFLAT |
5.112 |
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- | Schottky | 60V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 1A PMDU |
2.556 |
|
Automotive, AEC-Q101 | Schottky | 30V | 1A | 390mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 60pF @ 10V, 1MHz | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 3A PMDT |
2.934 |
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- | Schottky | 40V | 3A | 620mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | SOD-128 | PMDT | 150°C (Max) |
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Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ=3000 V |
8.712 |
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- | - | - | - | - | - | - | - | - | - | - | - | - |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 5A DO214AA |
2.682 |
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- | Schottky | 20V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 5A DO214AA |
7.758 |
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Automotive, AEC-Q101 | Schottky | 20V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 5A DO214AA |
6.840 |
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- | Schottky | 30V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 5A DO214AA |
6.300 |
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Automotive, AEC-Q101 | Schottky | 30V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 5A DO214AA |
6.408 |
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- | Schottky | 40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 5A DO214AA |
2.916 |
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Automotive, AEC-Q101 | Schottky | 40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 5A DO214AA |
7.092 |
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- | Schottky | 50V | 5A | 750mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 5A DO214AA |
7.902 |
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Automotive, AEC-Q101 | Schottky | 50V | 5A | 750mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 5A DO214AA |
2.790 |
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Automotive, AEC-Q101 | Schottky | 60V | 5A | 750mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 3A PMDS |
7.470 |
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- | Schottky | 30V | 3A | 420mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1A DO220AA |
7.326 |
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eSMP® | Avalanche | 800V | 1A | 1.6V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 1µA @ 800V | 8.5pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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Sanken |
DIODE GEN PURP 1KV 200MA AXIAL |
2.034 |
|
- | Standard | 1000V | 200mA | 4V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 200ns | 100µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 1KV 200MA AXIAL |
6.966 |
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- | Standard | 1000V | 200mA | 4V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 200ns | 100µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 1KV 200MA AXIAL |
3.888 |
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- | Standard | 1000V | 200mA | 4V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 200ns | 100µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |