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Gleichrichter - Single

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 483/1165
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Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Diodentyp
Spannung - DC-Rückwärtsgang (Vr) (max.)
Current - Average Rectified (Io)
Spannung - Vorwärts (Vf) (Max) @ If
Geschwindigkeit
Reverse Recovery Time (trr)
Strom - Umkehrleckage @ Vr
Kapazität @ Vr, F.
Montagetyp
Paket / Fall
Lieferantengerätepaket
Betriebstemperatur - Verbindungsstelle
RS3J-M3/57T
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 3A DO214AB
7.524
-
Standard
600V
3A
1.3V @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
10µA @ 600V
34pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
RS3K-M3/57T
Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 3A DO214AB
5.076
-
Standard
800V
3A
1.3V @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
10µA @ 800V
34pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
CMHD2003 BK
Central Semiconductor Corp
DIODE GEN PURP 250V 200MA SOD123
6.876
-
Standard
250V
200mA
1V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100nA @ 200V
1.5pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-65°C ~ 150°C
HS5A V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 5A DO214AB
6.120
-
Standard
50V
5A
-
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5B V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 5A DO214AB
7.308
-
Standard
100V
5A
-
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S5A R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 5A DO214AB
2.718
-
Standard
50V
5A
1.15V @ 5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 50V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S5B R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 5A DO214AB
2.196
-
Standard
100V
5A
1.15V @ 5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 100V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S5D R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 5A DO214AB
8.064
-
Standard
200V
5A
1.15V @ 5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 200V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S5G R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 5A DO214AB
8.280
-
Standard
400V
5A
1.15V @ 5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 400V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S5J R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 5A DO214AB
3.420
-
Standard
600V
5A
1.15V @ 5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S5K R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 5A DO214AB
5.886
-
Standard
800V
5A
1.15V @ 5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 800V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SK315B M4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 3A DO214AA
7.038
-
Schottky
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK320B M4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 3A DO214AA
4.968
-
Schottky
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 200V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK320BHM4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 3A DO214AA
2.394
Automotive, AEC-Q101
Schottky
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 200V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
MUR320S R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
6.174
-
Standard
200V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
ES3A R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
4.320
-
Standard
50V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3AHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
7.884
Automotive, AEC-Q101
Standard
50V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3B R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
2.880
-
Standard
100V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3BHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
4.122
Automotive, AEC-Q101
Standard
100V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3C R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
5.922
-
Standard
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3CHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
8.676
Automotive, AEC-Q101
Standard
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3DHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
3.798
Automotive, AEC-Q101
Standard
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ESH3B R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
2.196
-
Standard
100V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 100V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
ESH3C R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
4.536
-
Standard
150V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 150V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
ESH3D R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
2.682
-
Standard
200V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 200V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR305S R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
8.280
-
Standard
50V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 50V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR310S R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
7.038
-
Standard
100V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 100V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR315S R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
6.642
-
Standard
150V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 150V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
XBS204S19R-G
Torex Semiconductor Ltd
SCHOTTKY BARRIER DIODE
3.906
*
-
-
-
-
-
-
-
-
-
-
-
-
XBS204V19R-G
Torex Semiconductor Ltd
SCHOTTKY BARRIER DIODE
8.820
*
-
-
-
-
-
-
-
-
-
-
-
-