Gleichrichter - Single

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Spannung - DC-Rückwärtsgang (Vr) (max.)

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Spannung - Vorwärts (Vf) (Max) @ If

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Strom - Umkehrleckage @ Vr

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single

Datensätze 34.936

Seite 417/1165

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Diodentyp	Spannung - DC-Rückwärtsgang (Vr) (max.)	Current - Average Rectified (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Recovery Time (trr)	Strom - Umkehrleckage @ Vr	Kapazität @ Vr, F.	Montagetyp	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Verbindungsstelle
S5GBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO214AA	8.514	Automotive, AEC-Q101	Standard	400V	5A	1.1V @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S5JBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO214AA	8.802	Automotive, AEC-Q101	Standard	600V	5A	1.1V @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S5KBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AA	4.464	Automotive, AEC-Q101	Standard	800V	5A	1.1V @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S5MBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 5A DO214AA	2.160	Automotive, AEC-Q101	Standard	-	5A	1.1V @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
NRVBA1H100T3G-VF01	ON Semiconductor	DIODE SCHOTTKY 100V 1A SMA	8.316	*	-	-	-	-	-	-	-	-	-	-	-	-
CMG05(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 1A M-FLAT	2.772	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CRH02(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 500MA S-FLAT	6.012	-	Standard	200V	500mA	950mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
CUS10I30A(TE85L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A US-FLAT	7.020	-	Schottky	30V	1A	390mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	-	60µA @ 30V	50pF @ 10V, 1MHz	Surface Mount	SC-76, SOD-323	US-FLAT (1.25x2.5)	150°C (Max)
CSFA104-G	Comchip Technology	DIODE GEN PURP 400V 1A DO214AC	5.436	-	Standard	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
CURA103-G	Comchip Technology	DIODE GEN PURP 200V 1A DO214AC	4.428	-	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	150°C (Max)
CURA104-G	Comchip Technology	DIODE GEN PURP 400V 1A DO214AC	8.010	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	150°C (Max)
SB120-T	Diodes Incorporated	DIODE SCHOTTKY 20V 1A DO41	18.575	-	Schottky	20V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
SB140-T	Diodes Incorporated	DIODE SCHOTTKY 40V 1A DO41	4.770	-	Schottky	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
SB150-T	Diodes Incorporated	DIODE SCHOTTKY 50V 1A DO41	7.560	-	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
SB160-T	Diodes Incorporated	DIODE SCHOTTKY 60V 1A DO41	4.752	-	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
SB170-T	Diodes Incorporated	DIODE SCHOTTKY 70V 1A DO41	440	-	Schottky	70V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 70V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
SB180-T	Diodes Incorporated	DIODE SCHOTTKY 80V 1A DO41	8.172	-	Schottky	80V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 80V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
SB190-T	Diodes Incorporated	DIODE SCHOTTKY 90V 1A DO41	4.662	-	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 90V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
1N5617GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AC	7.704	SUPERECTIFIER®	Standard	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 400V	25pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
1N5621GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AC	8.712	SUPERECTIFIER®	Standard	800V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	500nA @ 800V	25pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
CSFA102-G	Comchip Technology	DIODE GEN PURP 100V 1A DO214AC	5.652	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	150°C (Max)
CURA107-HF	Comchip Technology	DIODE GEN PURP 1KV 1A DO214AC	4.068	-	Standard	1000V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	5µA @ 1000V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	150°C (Max)
1N5621GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AC	2.412	SUPERECTIFIER®	Standard	800V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	500nA @ 800V	25pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
ES1AHE3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO214AC	3.492	Automotive, AEC-Q101	Standard	50V	1A	920mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1BHE3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO214AC	5.292	Automotive, AEC-Q101	Standard	100V	1A	920mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1CHE3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 1A DO214AC	3.852	Automotive, AEC-Q101	Standard	150V	1A	920mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 150V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
UF4001-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO204AL	7.020	-	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4002-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO204AL	6.948	-	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4003-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AL	2.430	-	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
UF4004-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL	3.996	-	Standard	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C

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