Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 414/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1.6A DO220AA |
7.506 |
|
Automotive, AEC-Q101, eSMP® | Standard | 600V | 1.6A | 1.05V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 5µA @ 600V | 13pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 3A DO214AB |
4.842 |
|
- | Standard | 50V | 3A | - | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 50V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO214AB |
5.436 |
|
- | Standard | 100V | 3A | - | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 100V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
8.892 |
|
- | Standard | 200V | 3A | - | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 200V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO214AB |
8.658 |
|
- | Standard | 400V | 3A | - | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO214AB |
5.706 |
|
- | Standard | 600V | 3A | - | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 600V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 3A DO214AB |
4.410 |
|
- | Standard | 800V | 3A | - | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 800V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 3A DO214AB |
8.892 |
|
- | Standard | - | 3A | - | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 1000V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
3A,100V,SMF,TRENCH SKY RECT. |
8.748 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 100V | 3A | 830mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 85µA @ 100V | 240pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
3A,120V,SMF,TRENCH SKY RECT. |
6.372 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 120V | 3A | 940mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 120V | 220pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
3A,150V,SMF,TRENCH SKY RECT. |
2.502 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 150V | 3A | 1.24V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 85µA @ 150V | 150pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
3A,60V,SMF,TRENCH SKY RECT. |
6.480 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 60V | 3A | 620mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 60V | 310pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -40°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A DO214AC |
2.646 |
|
Automotive, AEC-Q101 | Schottky | 150V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 2A SMB |
8.604 |
|
- | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 93pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A DO214AA |
5.580 |
|
- | Schottky | 150V | 1A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 200MA SC70 |
8.676 |
|
- | Schottky | 30V | 200mA (DC) | 600mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 25V | 1.5pF @ 15V, 1MHz | Surface Mount | SC-70, SOT-323 | SC-70 | -55°C ~ 125°C |
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ON Semiconductor |
DIODE SCHOTTKY 70V 200MA SC70-3 |
3.690 |
|
- | Schottky | 70V | 200mA (DC) | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 35V | 1pF @ 20V, 1MHz | Surface Mount | SC-70, SOT-323 | SC-70-3 (SOT323) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AC |
6.048 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AC |
8.028 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AC |
3.798 |
|
SUPERECTIFIER® | Standard | 800V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1.5A DO204AC |
3.528 |
|
SUPERECTIFIER® | Standard | 600V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 3.5µs | 5µA @ 600V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1.5A DO204AC |
7.236 |
|
SUPERECTIFIER® | Standard | 800V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 3.5µs | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AC |
2.754 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AC |
5.652 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 3A 40V DO-214AC |
3.312 |
|
- | Schottky | 40V | 3A | 490mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A MPG06 |
6.570 |
|
Automotive, AEC-Q101 | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 400V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 20V 500MA 1005 |
2.034 |
|
- | Schottky | 20V | 500mA | 385mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 250µA @ 20V | 170pF @ 0V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005/SOD-323F | 125°C (Max) |
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Comchip Technology |
DIODE SCHOTTKY 40V 500MA 1005 |
2.556 |
|
- | Schottky | 40V | 500mA | 640mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 20µA @ 40V | 170pF @ 0V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005/SOD-323F | 125°C (Max) |
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Micro Commercial Co |
DIODE GEN PURP 50V 1A SOD123FL |
7.578 |
|
- | Standard | 50V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | - | Surface Mount | SOD-123F | SOD-123FL | -65°C ~ 150°C |
|
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 600V 700MA SFLAT |
4.374 |
|
- | Standard | 600V | 700mA | 2V @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 600V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |