Gleichrichter - Single

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Diodentyp

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Spannung - DC-Rückwärtsgang (Vr) (max.)

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Current - Average Rectified (Io)

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Spannung - Vorwärts (Vf) (Max) @ If

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Geschwindigkeit

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Reverse Recovery Time (trr)

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Strom - Umkehrleckage @ Vr

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Kapazität @ Vr, F.

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Montagetyp

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single

Datensätze 34.936

Seite 353/1165

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Diodentyp	Spannung - DC-Rückwärtsgang (Vr) (max.)	Current - Average Rectified (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Recovery Time (trr)	Strom - Umkehrleckage @ Vr	Kapazität @ Vr, F.	Montagetyp	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Verbindungsstelle
SRT15 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A TS-1	8.118	-	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT16 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A TS-1	7.434	-	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
US2DA	ON Semiconductor	DIODE GP 200V 1.5A DO214AC	7.434	Automotive, AEC-Q101	Standard	200V	1.5A	1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
HS1KL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SUB SMA	5.796	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SR009 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 500MA DO204AL	2.016	-	Schottky	90V	500mA	850mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	65pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S1PA-M3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO220AA	3.312	eSMP®	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 50V	-	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
S1PAHE3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO220AA	3.618	eSMP®	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 50V	-	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
CDBMF160-HF	Comchip Technology	DIODE SCHOTTKY 60V 1A SOD123FL	7.650	-	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	35pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-40°C ~ 125°C
BAV116HWF-7	Diodes Incorporated	DIODE SW 130V 215MA SOD123F	4.392	-	Standard	130V	215mA (DC)	1.25V @ 150mA	Standard Recovery >500ns, > 200mA (Io)	3µs	5nA @ 75V	5pF @ 0V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-65°C ~ 150°C
CDBF0520L	Comchip Technology	DIODE SCHOTTKY 20V 500MA 1005	6.192	-	Schottky	20V	500mA	385mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	22ns	250µA @ 20V	170pF @ 0V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	-40°C ~ 125°C
CDBF0520L-HF	Comchip Technology	DIODE SCHOTTKY 20V 500MA 1005	3.870	-	Schottky	20V	500mA	385mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	22ns	250µA @ 20V	170pF @ 0V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	-40°C ~ 125°C
SS14LHRHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SUB SMA	6.444	Automotive, AEC-Q101	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS16LHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SUB SMA	7.740	Automotive, AEC-Q101	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HER105G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	2.970	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
CDBFN140-G	Comchip Technology	DIODE SCHOTTKY 40V 1A SOD323	4.608	-	Schottky	40V	1A (DC)	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	120pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	SOD-323	-50°C ~ 125°C
SR010 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 500MA DO204	2.934	-	Schottky	100V	500mA	850mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	65pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR010 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 500MA DO204	5.976	-	Schottky	100V	500mA	850mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	65pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
RS1K R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	6.318	-	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2DA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO214AC	3.672	-	Standard	200V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 200V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1KHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	8.280	Automotive, AEC-Q101	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1MHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO214AC	7.326	Automotive, AEC-Q101	Standard	-	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS12HR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A DO214AC	4.356	Automotive, AEC-Q101	Schottky	20V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS13HR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO214AC	4.338	Automotive, AEC-Q101	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS14HR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A DO214AC	7.920	Automotive, AEC-Q101	Schottky	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS15HR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A DO214AC	6.714	Automotive, AEC-Q101	Schottky	50V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS16HR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A DO214AC	8.730	Automotive, AEC-Q101	Schottky	60V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
CBS10F40,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A CST2B	6.282	-	Schottky	40V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 40V	74pF @ 0V, 1MHz	Surface Mount	SOD-882	CST2B	150°C (Max)
ES1A M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	3.546	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	16pF @ 1V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1B M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	2.610	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	16pF @ 1V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1C M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO214AC	2.646	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	16pF @ 1V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C

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