Gleichrichter - Single

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Diodentyp

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Spannung - DC-Rückwärtsgang (Vr) (max.)

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Current - Average Rectified (Io)

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Spannung - Vorwärts (Vf) (Max) @ If

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Geschwindigkeit

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Reverse Recovery Time (trr)

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Strom - Umkehrleckage @ Vr

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Kapazität @ Vr, F.

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Montagetyp

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single

Datensätze 34.936

Seite 350/1165

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Diodentyp	Spannung - DC-Rückwärtsgang (Vr) (max.)	Current - Average Rectified (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Recovery Time (trr)	Strom - Umkehrleckage @ Vr	Kapazität @ Vr, F.	Montagetyp	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Verbindungsstelle
RS1AHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	7.560	Automotive, AEC-Q101	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1BHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	2.988	Automotive, AEC-Q101	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1DHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	3.222	Automotive, AEC-Q101	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1GHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	7.308	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1JHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	4.680	Automotive, AEC-Q101	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RSFKL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 500MA SUBSMA	4.932	-	Standard	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
CUS10F40,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A USC	2.988	-	Schottky	40V	1A	670mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 40V	74pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	150°C (Max)
UF4006HR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	7.956	Automotive, AEC-Q101	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4007HR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	2.556	Automotive, AEC-Q101	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SS110L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SUB SMA	7.056	-	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS110L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SUB SMA	5.022	-	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HER103G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	6.714	-	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
HER107G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	3.564	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4002 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	5.598	-	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4003 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	2.304	-	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4004 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	6.264	-	Standard	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
B250AE-13	Diodes Incorporated	DIODE SCHOTTKY 50V 2A SMA	3.960	-	Schottky	50V	2A	650mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	75pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
B260AE-13	Diodes Incorporated	DIODE SCHOTTKY 60V 2A SMA	6.138	-	Schottky	60V	2A	650mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	75pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
HS1AL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	8.640	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1BL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	2.826	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1DL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	2.088	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1FL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	3.726	-	Standard	300V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1GL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	5.274	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1JL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	2.808	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1AHE3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO214AC	8.460	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 50V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S1BHE3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO214AC	8.208	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 100V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S1KHE3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO214AC	3.006	-	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
NRVUHS160VT3G	ON Semiconductor	DIODE GEN PURP 600V 1A SMB	4.644	Automotive, AEC-Q101	Standard	600V	1A	2.4V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	20µA @ 600V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
B180AE-13	Diodes Incorporated	DIODE SCHOTTKY 80V 1A SMA	3.816	-	Schottky	80V	1A	790mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 80V	27pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
SDM1L20DCP3-7	Diodes Incorporated	SCHOTTKY RECTIFIER X3-DSN1006-3	3.402	*	-	-	-	-	-	-	-	-	-	-	-	-

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